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Audrey Jannaud

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Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate

2021 Applied Physics Express
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Thin layer etching of low-k SiCO spacer using hydrogen ion implantation followed by hydrofluoric acid

2018 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets

2018 IEDM | International Electron Devices Meeting
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