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Masayuki Iwase
Masayuki Iwase
Tokyo Institute of Technology
MOSFET
Materials science
Optoelectronics
Radiation hardening
Physics
6
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Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage
2021
Japanese Journal of Applied Physics
Munehiro Ogasawara
Ryoichiro Yoshida
Yuta Oshima
Motoki Ando
Arisa Kimura
Kenji Hirakawa
Masayuki Iwase
Shinsuke Nabeya
Takashi Yoda
Noboru Ishihara
Hiroyuki Ito
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Radiation hardness evaluation of ELT in Ring-oscillator
2021
The Japan Society of Applied Physics
Arisa Kimura
Ryoichiro Yoshida
Motoki Ando
Yuta Oshima
Shinsuke Nabeya
Kenji Hirakawa
Masayuki Iwase
Munehiro Ogasawara
Takashi Yoda
Noboru Ishihara
Hiroyuki Ito
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Development of dynamic deterioration model of MOSFET under TID effect
2019
The Japan Society of Applied Physics
Yuta Oshima
Motoki Ando
Kenji Hirakawa
Masayuki Iwase
Munehiro Ogasawara
Takashi Yoda
Noboru Ishihara
Hiroyuki Ito
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