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R. Petralia
R. Petralia
Boron
Amorphous silicon
Ion implantation
Germanium
Analytical chemistry
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110-GHz f/sub T/ silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression
2006
IEEE Transactions on Electron Devices
M.N. Kham
Huda El Mubarek
J.M. Bonar
P. Ashburn
P. Ward
L. Fiore
R. Petralia
C. Alemanni
A. Messina
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