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Tabuchi Toshiya
Tabuchi Toshiya
Materials science
Optoelectronics
Substrate (chemistry)
Metalorganic vapour phase epitaxy
Analytical chemistry
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Si基板上のAlGaN/GaN高電子移動度トランジスタ構造におけるAlGaNバッファ層のAl含有量の影響【Powered by NICT】
2017
Physica Status Solidi A-applications and Materials Science
Yamaoka Yuya
Kakamu Ken
Ubukata Akinori
Yano Yoshiki
Tabuchi Toshiya
Matsumoto Koh
Egawa Takashi
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AlGaN/GaN高電子移動度トランジスタ構造のSiと垂直漏れ電流に及ぼす初期AlN核形成層上のAlGaNバッファ層のAl含有量との関係【Powered by NICT】
2016
Yamaoka Yuya
Ito Kazuhiro
Ubukata Akinori
Yano Yoshiki
Tabuchi Toshiya
Matsumoto Koh
Egawa Takashi
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Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate
2015
Yamaoka Yuya
Ito Kazuhiro
Ubukata Akinori
Tabuchi Toshiya
Matsumoto Koh
Egawa Takashi
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High growth rate AlN and AlGaN on large diameter Si substrate(6inch & 8inch)
2012
IEICE technical report. Component parts and materials
Tokunaga Hiroki
Ubukata Akinori
Yano Yoshiki
Yamaoka Yuya
Yamaguchi Akira
Tabuchi Toshiya
Matumoto Kou
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High rate growth of GaN using 4 inch x 11 multi wafer MOVPE reactor (UR25K)
2009
Yano Yoshiki
Ikenaga Kazutada
Tokunaga Hiroki
Yamamoto Jun
Tabuchi Toshiya
Uchiyama Kousuke
Yamaguchi Akira
Fukuda Yasushi
Ubukata Akinori
Harada Yasuhiro
Ban Yuzaburo
Matsumoto Koh
Yamazaki Toshiaki
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