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H. C. Sagong
H. C. Sagong
Pohang University of Science and Technology
Optoelectronics
Electronic engineering
Dielectric
Metal gate
Gate dielectric
3
Papers
2
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0
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信頼性工学:技術スケーリングを可能にする助け【JST・京大機械翻訳】
2018
S. Pae
H. C. Sagong
M. Jin
T. Jeong
J. Kim
I. Baick
H. Shim
Jongwoo Park
H. Kim
Y C Choi
Seung Wook Shin
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Impact of dipole-induced dielectric relaxation on high-frequency performance in La-incorporated HfSiON/metal gate nMOSFET
2009
IEDM | International Electron Devices Meeting
Gil-Bok Choi
H. C. Sagong
Kyong Taek Lee
Min-Sang Park
Hyun-Sik Choi
Seung-Hyun Song
Rock-Hyun Baek
Chan-Hoon Park
Seunghun Lee
Jang-Sik Lee
C. Y. Kang
H.-H. Tseng
R. Jammy
Yoon-Ha Jeong
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Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs
2008
The Japan Society of Applied Physics
Kyong Taek Lee
C Y Kang
S. H. Hong
H.S. Choi
G. B. Choi
J.C. Kim
S. H. Song
R. H. Baek
M. S. Park
H. C. Sagong
S. H. Sakong
S.-W. Jung
H.-K. Park
H.S. Hwang
B. H. Lee
Yoon-Ha Jeong
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