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T. Lorin
T. Lorin
Electronic engineering
Optoelectronics
Schottky diode
Engineering
Gallium nitride
6
Papers
14
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A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT
2018
IRPS | International Reliability Physics Symposium
William Vandendaele
X. Garros
T. Lorin
Erwan Morvan
A. Torres
René Escoffier
Marie-Anne Jaud
M. Plissonnier
F. Gaillard
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Citations (5)
On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes
2018
IEEE Journal of the Electron Devices Society
T. Lorin
William Vandendaele
Romain Gwoziecki
Yannick Baines
J. Biscarrat
Marie-Anne Jaud
Charlotte Gillot
Matthew Charles
M. Plissonnier
G. Ghibaudo
F. Gaillard
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Citations (3)
Study of forward AC stress degradation of GaN-on-Si Schottky diodes
2018
Microelectronics Reliability
T. Lorin
William Vandendaele
Romain Gwoziecki
Charlotte Gillot
J. Biscarrat
G. Ghibaudo
F. Gaillard
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A microsecond time resolved current collapse test setup dedicated to GaN-based Schottky diode characterization
2017
ICMTS | International Conference on Microelectronic Test Structures
T. Lorin
W. Van Den Daele
Charlotte Gillot
Matthew Charles
J. Biscarrat
M. Plissonnier
G. Ghibaudo
G. Reimbold
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Citations (3)
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