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H. S. Brandi

Federal University of Rio de Janeiro

32

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366

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Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires

2010 Journal of Physics: Condensed Matter
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Non-Markovian damping of Rabi oscillations in semiconductor quantum dots

2009 Journal of Physics: Condensed Matter
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Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields

2009 Journal of Physics D
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Electron Landé g factor in GaAs–(Ga,Al)As quantum wells under applied magnetic fields: Effects of Dresselhaus spin splitting

2008 Journal of Applied Physics
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Non-Markovian damping of Rabi oscillations in semiconductor quantum dots

2008 Bulletin of the American Physical Society
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Coherent properties and Rabi oscillations in two-level donor systems

2006 Brazilian Journal of Physics
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Cyclotron effective mass and Landé g factor in GaAs-Ga1-xAlxAs quantum wells under growth-direction applied magnetic fields

2006 Journal of Applied Physics
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Terahertz excitation and coherence effects of two-level donor systems in GaAs quantum dots

2005 Journal of Physics: Condensed Matter
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Rabi oscillations in two-level semiconductor systems

2005 Solid State Communications
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Laser effects on donor states in low-dimensional semiconductor heterostructures

2004 Physical Review B
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Citations (41)