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Ikarashi Nobuyuki

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Wide range doping control and defect characterization of GaN layers with various Mg concentrations

2018 Journal of Applied Physics
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走査型TEMによるNi拡散Si(001)表面層の原子配列の決定-低温NiSi 2 形成の前駆構造-

2010
- Ikarashi Nobuyuki
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Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention

2007 International Electron Devices Meeting
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