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Kang Shinhyuck
Kang Shinhyuck
Samsung
Subthreshold conduction
Thin-film transistor
Indium
Gallium
Microstructure
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Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm 2 /Vs
2021
IEEE Electron Device Letters
Bo Kyoung Kim
Nuri On
Cheol Hee Choi
Min Jae Kim
Kang Shinhyuck
Jun-Hyung Lim
Jae Kyeong Jeong
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