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isikawa seizi
isikawa seizi
Chemical engineering
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Ba導入による4H‐SiC MOS界面の改善
2017
muraoka kousuke
sezaki hirosi
isikawa seizi
maeda tomonori
yosikawa kou maro
kuroki sin'itirou
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4H‐SiC MOSキャパシタにおけるSiC表面のCF4エッチングの効果
2017
kobayakawa kiiti
muraoka kousuke
sezaki hirosi
isikawa seizi
maeda tomonori
yosikawa kou maro
kuroki sin'itirou
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4H-SiCSBD逆方向リーク電流の犠牲酸化による低減効果 | 文献情報 | J-GLOBAL 科学技術総合リンクセンター
2013
isikawa seizi
maeda tomonori
sezaki hirosi
kuroki sin'itirou
yosikawa kou maro
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