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Ryuhei Torigoe
Ryuhei Torigoe
Kyushu University
Carbon film
Plasma processing
Plasma
Plasma etching
Nanotechnology
4
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4
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0
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Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD
2014
Xiao Dong
Ryuhei Torigoe
Kazunori Koga
Giichiro Uchida
Naho Itagaki
Masaharu Shiratani
Kosuke Takenaka
Yuichi Setsuhara
Makoto Sekine
Masaru Hori
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Citations (1)
H₂/N₂ Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition (Special Issue : Advanced Plasma Science and its Applications for Nitrides and Nanomaterials)
2013
Japanese journal of applied physics : JJAP
Tatsuya Urakawa
Ryuhei Torigoe
Hidefumi Matsuzaki
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H2/N2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition
2013
Japanese Journal of Applied Physics
Tatsuya Urakawa
Ryuhei Torigoe
Hidefumi Matsuzaki
Daisuke Yamashita
Giichiro Uchida
Kazunori Koga
Masaharu Shiratani
Yuichi Setsuhara
Keigo Takeda
Makoto Sekine
Masaru Hori
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Plasma etching resistance of plasma anisotropic CVD carbon films
2012
ICOPS | International Conference on Plasma Science
Ryuhei Torigoe
Tatsuya Urakawa
Daisuke Yamashita
Hidefumi Matsuzaki
G. Uchida
K Koga
Masaharu Shiratani
Yuichi Setsuhara
Makoto Sekine
M. Hori
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