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Daniel Kaminzky
Daniel Kaminzky
Fraunhofer Society
Composite material
Materials science
Optoelectronics
Photoluminescence
Carrier lifetime
5
Papers
17
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Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC
2018
Materials Science Forum
Jürgen Erlekampf
Daniel Kaminzky
Katharina Rosshirt
Birgit Kallinger
Mathias Rommel
Patrick Berwian
Jochen Friedrich
L. Frey
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Citations (3)
Optical Stressing of 4H-SiC Material and Devices
2018
Materials Science Forum
Birgit Kallinger
Daniel Kaminzky
Patrick Berwian
Jochen Friedrich
Steffen Oppel
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Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
2016
Materials Science Forum
Daniel Kaminzky
Birgit Kallinger
Patrick Berwian
Mathias Rommel
Jochen Friedrich
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Citations (2)
Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence
2016
Materials Science Forum
Larissa Wehrhahn-Kilian
Karl Otto Dohnke
Daniel Kaminzky
Birgit Kallinger
Steffen Oppel
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Citations (3)
Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence
2015
Solid State Phenomena
Patrick Berwian
Daniel Kaminzky
Katharina Roßhirt
Birgit Kallinger
Jochen Friedrich
Steffen Oppel
Adrian Schneider
Michael Schütz
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Citations (8)
1