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Kazuhiro Morimitsu

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DISPOSITIF DE TRAITEMENT DE SUBSTRAT, PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR, ET PROGRAMME

2018
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Conditions for Homogeneous and Rapid Deposition of Si Film on Semiconductor Wafers

2007 Transactions of the Japan Society of Mechanical Engineers. B
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806 Analysis of influencing factors for film formation on Si wafers on batch type LPCVD

2005
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A16-086 ANALYSIS OF GAS FLOWS ON SILICON-WAFER SURFACE IN LOW PRESSURE CVD REACTOR

2003
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