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Seiichiro Matsumoto

National Institute for Materials Science
Kyushu University

72

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Electrical insulation characteristics of metal-insulator-metal structures using boron nitride dielectric films deposited with low-energy ion impact

2021 Materials Science in Semiconductor Processing
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Citations (1)
Effect of the boron-to-nitrogen ratio on leakage current characteristics of boron nitride films prepared under low-energy ion impact by surface-wave plasma enhanced chemical vapor deposition

2020 Thin Solid Films
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Biocompatible Cubic Boron Nitride: A Noncytotoxic Ultrahard Material

2020 Advanced Functional Materials
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Effect of low-energy ion impact on the structure of hexagonal boron nitride films studied in surface-wave plasma

2019 Surface and Interface Analysis
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Citations (2)
Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

2018 Journal of Applied Physics
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Superhydrophilic cubic boron nitride films

2016 RSC Advances
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Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

2015 Journal of Applied Physics
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Thermal stability of boron nitride/silicon p-n heterojunction diodes

2015 Journal of Applied Physics
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Effect of Low-Energy Ions on Plasma-Enhanced Deposition of Cubic Boron Nitride

2015 Bulletin of the American Physical Society
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Origin of rectification in boron nitride heterojunctions to silicon.

2013 ACS Applied Materials & Interfaces
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Citations (18)