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Chang
Chang
Toshiba
Parasitic element
Physics
Electrode
Work function
Short-channel effect
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High performance deep submicron buried channel PMOSFET using P/sup +/ poly-Si spacer induced self-aligned ultra shallow junctions
1992
IEDM | International Electron Devices Meeting
Chang
Kohyama
Kakuma
Sudo
Asao
Kumagai
Matsuoka
Ishiuchi
Sawada
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