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Guo-Qiang Lo

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Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs

2007 Symposium on VLSI Technology
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Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs

2007 Symposium on VLSI Technology
Show All
- Source
- Cite
- Save
Citations (0)