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Tsutomu Udo
Tsutomu Udo
Hitachi
Base (exponentiation)
Optoelectronics
Materials science
Epitaxy
Doping
2
Papers
3
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Study on extremely thin base SiGe : C HBTs featuring sub 5-ps ECL gate delay
2003
BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
T. Tominari
Shinichro Wada
Kazuaki Tokunaga
Kaoru Koyu
Maki Kubo
Tsutomu Udo
Motoshi Seto
Kenichi Ohhata
H. Hosoe
Yukihiro Kiyota
Katsuyoshi Washio
Takashi Hashimoto
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190-GHz fT, 130-GHz fmax SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy
2002
Yukihiro Kiyota
Takashi Hashimoto
Tsutomu Udo
A. Kodama
Hiromi Shimamoto
R. Hayami
Katsuyoshi Washio
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Citations (2)
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