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Toshitaka Miyata
Toshitaka Miyata
Toshiba
Optoelectronics
Electronic engineering
MOSFET
Gate oxide
Transconductance
7
Papers
10
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150 GHz FMAX with high drain breakdown voltage immunity by multi gate oxide dual work-function (MGO-DWF)-MO SFET
2015
IEDM | International Electron Devices Meeting
Toshitaka Miyata
Hideki Tanaka
K Kagimoto
M. Kamiyashiki
M. Kamimura
A. Hidaka
Masakazu Goto
K. Adachi
Akira Hokazono
Tatsuya Ohguro
K. Nagaoka
Yoji Watanabe
S. Hirooka
Yoshihiro Ito
Shigeru Kawanaka
K. Ishimaru
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Citations (5)
Self-aligned Bottom Source Tunnel Field-Effect Transistor (Btm-S TFET) with Si:C and Si:P Epitaxial Process
2014
Toshitaka Miyata
Shinji Mori
E Sugizaki
Masakazu Goto
Y. Kondo
Akira Hokazono
Tatsuya Ohguro
Shigeru Kawanaka
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Citations (1)
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