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E. G. Tishkovsky
E. G. Tishkovsky
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Ion implantation
Oxygen
Chemistry
Analytical chemistry
4
Papers
8
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Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron
2006
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
V. I. Obodnikov
E. G. Tishkovsky
A.G. Cherkov
L.I. Fedina
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MOPIT: OPEN SYSTEM FOR DEVICE AND TECHNOLOGY SIMULATION
1992
Compel-the International Journal for Computation and Mathematics in Electrical and Electronic Engineering
A.L. Alexsandrov
P. A. Androsenko
V. M. Bedanov
A.M. Bekesheva
E.E. Dagnan
O.E. Dnitrieva
G.V. Gadiyak
V.P. Ginkin
M. S. Ivanov
Zh.L. Korobitsina
T.M. Lukhanova
M. S. Obrekht
A.A. Shinanskiy
V. A. Schveigert
I.V. Schveigert
E. G. Tishkovsky
Yu.P. Zhydkov
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Random Walk and Interaction of Vacancies with Imperfections in Diamond Lattice as a Discrete Markovian Process
1982
Physica Status Solidi B-basic Solid State Physics
E. G. Tishkovsky
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Accumulation of defects in silicon at superhigh doses of electron irradiation
1980
Radiation Effects and Defects in Solids
V. D. Akhmetov
V. V. Bolotov
A.V. Dvurechensky
B. P. Kashnikov
L. S. Smirnov
E. G. Tishkovsky
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Citations (6)
1