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P. Ivo
P. Ivo
Leibniz Association
Double heterostructure
Optoelectronics
Logic gate
Gallium nitride
Epitaxy
2
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5
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0
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GaN-HEMTs devices with single- and double-heterostructure for power switching applications
2013
IRPS | International Reliability Physics Symposium
Gaudenzio Meneghesso
Alberto Zanandrea
Antonio Stocco
Isabella Rossetto
C. De Santi
Fabiana Rampazzo
Matteo Meneghini
Enrico Zanoni
Eldad Bahat-Treidel
Oliver Hilt
P. Ivo
J. Wuerfl
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DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices
2011
Alberto Zanandrea
Fabiana Rampazzo
Antonio Stocco
E. Zanoni
Davide Bisi
Fabio Soci
Alessandro Chini
P. Ivo
J Wuerfl
Gaudenzio Meneghesso
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