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Louis Pleasant
Louis Pleasant
BAE Systems
Electronic engineering
Electron mobility
Transistor
Passivation
Atomic layer deposition
4
Papers
46
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0.1- $\mu \text{m}$ InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess
2016
IEEE Transactions on Electron Devices
Dong Xu
Kanin Chu
Jose Diaz
M. Ashman
James J. Komiak
Louis Pleasant
Alice Vera
Philip Seekell
Xiaoping Yang
Carlton Creamer
K. Nichols
K. H. George Duh
P.M. Smith
P.C. Chao
Lin Dong
Peide D. Ye
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Citations (7)
0.2- $\mu{\rm m}$ AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}$ Passivation
2013
IEEE Electron Device Letters
Dong Xu
K. K. Chu
Jose Diaz
Wenhua Zhu
Richard Roy
Louis Pleasant
K. Nichols
Pane Chane Chao
Min Xu
Peide D. Ye
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Citations (29)
Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications
2011
IEEE Transactions on Electron Devices
Dong Xu
Xiaoping Yang
W. Kong
P. Seekell
K Louie
Louis Pleasant
Lee Mohnkern
D M Dugas
K. K. Chu
H. Karimy
K. H. G. Duh
P.M. Smith
P.C. Chao
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Citations (10)
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