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H. M. Shin
H. M. Shin
Samsung
Magnetoresistive random-access memory
Static random-access memory
Computer hardware
Tunnel magnetoresistance
Frame (networking)
2
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1
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12.5 Mb/mm 2 embedded MRAM for high density non-volatile RAM applications
2021
VLSIT | Symposium on VLSI Technology
Kwang Pyuk Suh
Junha Lee
H. M. Shin
Jung Moo Lee
Kyu Han Lee
Y. J. Hong
Sung-hee Han
Yun Gi Kim
C. K. Kim
S. Pyo
H. T. Jung
Y. Ji
B. I. Seo
Sun-Kyu Hwang
Dae Sin Kim
Y. H. Kim
Se Chung Oh
D. E. Jeong
K. T. Nam
Byoung Ho Kwon
M. K. Cho
Yoon-Jong Song
K.H. Lee
Y. G. Hong
Gitae Jeong
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28-nm 0.08 mm 2 /Mb Embedded MRAM for Frame Buffer Memory
2020
IEDM | International Electron Devices Meeting
Sung-hee Han
Jung Moo Lee
H. M. Shin
J.H. Lee
K. S. Suh
K. T. Nam
B. S. Kwon
M. K. Cho
J.Y. Lee
Jun-Ho Jeong
J. H. Park
Se Chung Oh
Sung-il Park
S. H. Hwang
S. S. Pyo
Hyuck-Chai Jung
Y. Ji
J. H. Bak
Dae Sin Kim
W. S. Ham
Yong-Jae Kim
Kyu Pil Lee
Yoon-Jong Song
Gwan-Hyeob Koh
Y. G. Hong
Gitae Jeong
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