author-photo

Hussain H. Ladhani

Freescale Semiconductor

4

Papers

14

Citations

Citation Trend

Filter By

Papers (2) Sort By

Journal Conference Others

Analysis of the Baseband Termination of High Power RF Transistors

2019 IMS | International Microwave Symposium
Show All
- Source
- Cite
- Save
Citations (1)
A 350W, 2GHz, 44% efficient LDMOS power amplifier design with capability to handle a wideband 65MHz envelope signal

2012 IMS | International Microwave Symposium
Show All
- Source
- Cite
- Save
Citations (4)