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A. N. Andreev

Russian Academy of Sciences

31

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176

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High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide

2006 Semiconductors
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Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers

1999 Semiconductors
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Influence of proton irradiation on recombination current in 6H–SiC pn structures

1999 Materials Science and Engineering B-advanced Functional Solid-state Materials
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Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts

1998 Semiconductors
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High temperature Ti-Al-based ohmic contacts to p-6H-SiC

1998 CAS | International Semiconductor Conference
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Steady-state lifetime of the nonequilibrium carriers in proton irradiated 6H-SiC pn structures

1998 CAS | International Semiconductor Conference
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The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

1997 Materials Science and Engineering B-advanced Functional Solid-state Materials
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Influence of growth conditions on the structural perfection of β-SiC epitaxial layers fabricated on 6H-SiC substrates by vacuum sublimation

1997 Materials Science and Engineering B-advanced Functional Solid-state Materials
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Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates

1997 Semiconductors
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Influence of vapor phase composition in a growth cell on the doping level of silicon carbide epitaxial layers grown by vacuum sublimation

1996 Semiconductors
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