Old Web
English
Sign In
Acemap
>
authorDetail
>
C. Burham
C. Burham
University of Texas at Austin
Work function
Electronic engineering
MOSFET
Metal gate
Electrode
4
Papers
38
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (4)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Achieving Low V t (≪-0.3V) and Thin EOT (~1.0nm) in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications
2008
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
S. Park
G. Bersuker
S. C. Song
Hong-Hyun Park
C. Burham
B. S. Ju
C. S. Park
P. D. Kirsch
Byoung Hun Lee
R. Jammy
Show All
Source
Cite
Save
Citations (0)
Mechanism of V fb roll-off with High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function
2007
IEDM | International Electron Devices Meeting
S. C. Song
C. S. Park
J. Price
C. Burham
Rino Choi
H. C. Wen
K. Choi
H.-H. Tseng
Byoung Hun Lee
R. Jammy
Show All
Source
Cite
Save
Citations (23)
Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes : Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
2007
The Japan Society of Applied Physics
C. S. Park
S. C. Song
C. Burham
Hong Bae Park
H. Niimi
B. S. Ju
Joel Barnett
C. Y. Kang
P. Lysaght
G. Bersuker
Rino Choi
Hokyung Park
Hyunsang Hwang
Byung-Seok Park
S. Kim
P. D. Kirsch
Byoung Hun Lee
R. Jammy
Show All
Source
Cite
Save
Citations (6)
Gate First Metal-Aluminum-Nitride PMOS Electrodes for 32nm Low Standby Power Applications
2007
VLSIT | Symposium on VLSI Technology
H. C. Wen
S. C. Song
C. S. Park
C. Burham
G. Bersuker
Kisik Choi
M. A. Quevedo-Lopez
B. S. Ju
Husam N. Alshareef
Hiroaki Niimi
Hong Bae Park
P. Lysaght
Prashant Majhi
Byoung Hun Lee
R. Jammy
Show All
Source
Cite
Save
Citations (9)
1