author-photo

Thomas S. Rupp

IBM

3

Papers

11

Citations

Citation Trend

Filter By

Papers (2) Sort By

Journal Conference Others

Nitride framed shallow trench isolation (NFSTI) for self-aligned buried strap in high performance trench capacitor DRAM/eDRAM

2001 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
Show All
- Source
- Cite
- Save
Citations (0)
Extending trench DRAM technology to 0.15 /spl mu/m groundrule and beyond

1999 IEDM | International Electron Devices Meeting
Show All
- Source
- Cite
- Save
Citations (9)