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S. Z. Rahaman
S. Z. Rahaman
Materials science
Resistive touchscreen
resistive switching memory
Nanotechnology
Optoelectronics
5
Papers
2
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Impact of Al and Cu electrodes on GeOx/W for high-performance crossbar resistive switching memories
2012
The Japan Society of Applied Physics
S. Z. Rahaman
S Maikap
Chao-Sung Lai
Heng Yuan Lee
Wei-Su Chen
Frederick T. Chen
Ming-Jinn Tsai
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Effects of Ti interfacial layer on resistive switching memory performance using Cu filament in high-k Ta 2 O 5 solid-electrolyte
2011
The Japan Society of Applied Physics
A. K. Sahoo
S. Z. Rahaman
S Maikap
Heng Yuan Lee
Wei-Su Chen
Frederick T. Chen
Ming-Jer Kao
Ming-Jinn Tsai
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Formation free resistive switching memory device using Ge 0.4 Se 0.6 solid electrolyte
2009
The Japan Society of Applied Physics
S. Z. Rahaman
S Maikap
C. H. Lin
Tai-Yuan Wu
Yu-Sheng Chen
Pei-Jer Tzeng
Frederick T. Chen
Ming-Jer Kao
Ming-Jinn Tsai
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Resistive Switching Memory using High-κ Ta 2 O 5 Films
2008
The Japan Society of Applied Physics
Y. R. Tsai
S Maikap
D. Panda
S. Z. Rahaman
Chao-Sung Lai
Pei-Jer Tzeng
C. H. Lin
T.C. Tien
Tai-Yuan Wu
C. C. Wang
Ming-Jer Kao
Ming-Jinn Tsai
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