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F. Shadi Shahedipour-Sandvik

State University of New York System

6

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31

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P-Conductivity in Co-Implanted and Gyrotron Microwave-Annealed GaN: Optical and Electrical Studies

2020
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X-ray topography characterization of gallium nitride substrates for power device development

2020 Journal of Crystal Growth
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In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application

2020 AIP Advances
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Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance

2015 IEEE Photonics Technology Letters
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