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Tomihiro Hashizume

Hitachi
Tohoku University
University of Tokyo

360

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6029

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Immediate observation of embedded structure after top-down delayering by using “Dig and See” technology for GFIS-SIM based accurate overlay metrology (Conference Presentation)

2020
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Monochromatic electron emission from CeB6 (310) cold field emitter

2020 Applied Physics Letters
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Stabilization of cold-field-emission current from a CeB6 single-crystal emitter by using a faceted (100) plane

2020 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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Characteristics Comparison of Neon, Argon, and Krypton Ion Emissions from Gas Field Ionization Sources with a Single-Atom Tip

2019 Microscopy and Microanalysis
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Visualization of 3D structure of semiconductor devices by "Dig and See" using GFIS-SIM

2019
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Nanoscale Three Dimensional Analysis Method and Surface Science

2018
- Tomihiro Hashizume
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Development of scanning ion microscope with H 3 + gas field ionization ion source

2017 The Japan Society of Applied Physics
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Characteristics of krypton ion emission from a gas field ionization source with a single atom tip

2017 Japanese Journal of Applied Physics
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Comparison of Characteristics of Neon, Argon, and Krypton Ion Emissions from Gas Field Ionization Source with Single Atom Tip

2017 Microscopy and Microanalysis
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Morphological change of Si(100) surface from (2xn) to (2x1) reconstruction by hydrogen termination

2016
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