Hg/Cd Interdiffusion in Thin CdTe Film on HgCdTe Epilayer
0
Citation
4
Reference
10
Related Paper
Keywords:
Cadmium telluride photovoltaics
Passivation
Mercury cadmium telluride
The interaction of O2 with atomically clean Si surfaces has been studied by UHV secondary ion mass spectroscopy (SIMS). Thermally cleaned and annealed Si (111) surfaces, as well as ion-bombarded Si (111) surfaces, have been investigated. The silicon-oxygen interaction was found to take place in two steps. In step (i) a monoatomical oxide layer on the surface is formed with an initial sticking coefficient for O2 of about 1 and 0.05 for Si (111) and ion-bombarded Si (111), respectively. In step (ii) this monoatomical layer grows very slowly into greater depth.
Sticking coefficient
Cite
Citations (26)
Cite
Citations (14)
The different techniques of making ohmic contacts to p-type CdTe are reviewed and discussed. Mercury telluride, whose work-function matches perfectly that of p-type CdTe, is shown to be more favourable than Au or Pt. The HgTe contacts deposited by close spacing isothermal growth present a room temperature specific contact resistance ten times lower than so far reported. Hall effect measurements have been performed down to low temperatures on several undoped p-type CdTe and Cd0.7Hg0.3Te crystals. Ionisation energies of 0.05-0.07 and 0.13 eV for CdTe and 0.024 eV for Cd0.7Hg0.3Te have been determined and the nature of the responsible centres discussed.
Cadmium telluride photovoltaics
Mercury cadmium telluride
Ohmic contact
Telluride
Mercury
Cite
Citations (66)
AbstractAn ellipsometric procedure developed for noncontact in situ measurement of the CdTe buffer-layer temperature is presented. The procedure is based on the temperature dependence of the energy position of CdTe critical points and is intended for determining the initial temperature of the growth surface before epitaxy of the cadmium–mercury–telluride compound. An express method for determining the position of critical points by the spectra of ellipsometric parameter Ψ is proposed. A series of calibrated experiments is performed. They result in determination of the temperature dependences of the position of critical points. Estimations and the experiment show that the temperature-measurement accuracy is ±3°C.
Cadmium telluride photovoltaics
Mercury cadmium telluride
Position (finance)
Ellipsometry
Cite
Citations (4)
Cadmium telluride (CdTe) is a II-VI semiconductor material with a room-temperature bandgap of 1.45 eV. This chapter describes the metalorganic vapor phase epitaxy (MOVPE) of CdTe onto different substrates to provide a good crystalline and morphological surface for subsequent mercury cadmium telluride (MCT) epitaxy. Photoassisted MOVPE provides a lowering of the growth temperature when compared with the normal thermal reactions of the precursors. Plasma-assisted MOVPE has the same objective of photoassisted MOVPE in achieving high growth rates at temperatures <300°C. In situ optical monitoring of the growth of CdTe layers and related II-VI materials such as MCT, ZnTe, and CdS has proved to be a valuable tool in understanding the kinetic mechanisms for MOVPE growth and growth optimization. Among several thin-film deposition techniques used for CdTe deposition, MOCVD is an attractive method as it offers greater flexibility for doping and alloying and can operate at atmospheric pressure.
Cadmium telluride photovoltaics
Mercury cadmium telluride
Cite
Citations (3)
Cadmium telluride photovoltaics
Passivation
Characterization
Tellurium
Solid-state physics
Cite
Citations (27)
Cadmium telluride photovoltaics
Mercury cadmium telluride
Cite
Citations (32)
Two-dimensional doping profiles can be determined from multiple one-dimensional secondary ion mass spectroscopy (SIMS) profiles using computed tomography techniques. The chemical nature of SIMS enables the measurement of both as-implanted and annealed profiles with this technique. Mechanical lapping was done of multiple samples to expose different faces of the substrates followed by one-dimensional SIMS measurements. Measurements have been done with a Perkin Elmer Model 6300 SIMS and a Cameca IMS-3f SIMS. Refinements have been made in the numerical alignment of the separate one-dimensional SIMS data sets, which lead to more accurate reconstructions of the two-dimensional profiles.
Lapping
Cite
Citations (4)
Cite
Citations (20)
Historically, dynamic secondary ion mass spectroscopy (D-SIMS) has been used to quantitatively monitor the depth distribution of species present in low concentrations in samples/devices. We are not aware of any manuscript that describes the use of time of flight–secondary ion mass spectroscopy (ToF-SIMS) to perform quantitative analysis of aluminum present at low concentrations in silicon carbide (SiC) wafer substrates. In this paper, we will show that ToF-SIMS is able to replicate D-SIMS analysis. However, analysis at the lowest concentrations requires the collection of more spectral images at each depth. Tables of sputtering rates and sputtering yields, in addition to relative sensitivity factors are provided. We also highlight the benefits of ToF-SIMS analysis.
Time-of-Flight
Cite
Citations (3)