＜論文＞ Synthesis of Completely Substituted Bi3Fe5O12 Garnet Films by Metal Organic Deposition Technique (New Preparation Technique of Completely Substituted Bismuth Garnet Films)
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Yttrium Iron Garnet
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A 3-inch diameter magneto-optical single crystal garnet film having the composition (TmBi) 3 (FeGa) 5 O 12 is synthesized on Gd 3 Ga 5 O 12 (111) single crystal substrate using liquid phase epitaxy. The effects of growth rate on the structure, magnetization, coercivity, and Faraday rotation angle are investigated.
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Bi-substituted yttrium iron garnet, Y3-xBixFe5O12 (Bi:YIG, x = 1, 1.5), films were prepared on Gd3Ga5O12 (111) substrates by metal-organic decomposition (MOD) method to use as MO indicator films. Those films had the in-plane magnetic anisotropy and Faraday rotation as large as that of the single crystal and do not show prominent magnetic domain structure, which is often observed in single crystalline garnet films grown by liquid phase epitaxy method. Disappearance o magnetic domain structure can be attributed to a granular structure with a grain size of ∼ 50 nm in Bi:YIG thin films. The characteristics are suitable for MO indicator films to visualize a stray magnetic field strayed from a specimen. In this paper, MO imaging of Nb films with groove patterns is demonstrated.
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Epitaxial Ce and Bi comodified iron garnet and Ce-modified yttrium iron garnet thin films were grown on (100)-oriented Gd3Ga5O12 substrates by pulsed laser deposition, in order to investigate the role of Bi3+ ions and their contribution to the structural, chemical, and magneto-optical properties. Both films showed a strong Faraday rotation of 0.65 deg/μm and 0.52 deg/μm at 1.55 μm, respectively. The valence state of the Ce ions was significantly changed by the substitution with Bi3+, which in turn was demonstrated to lead to an increase in the concentration of Ce3+ as well as to the decrease in the lattice mismatch.
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We fabricated the Bi2Gd1Fe5O12 thin films on glass substrates with the Gd3Fe5O12 buffer layer by the metal organic decomposition (MOD) method. We found an optimum thickness of the Gd3Fe5O12 buffer layer and annealing temperature for crystallization giving the maximum Faraday rotation. The optimum sample showed Faraday rotation of as high as 36.3 deg./µm at the wavelength λ = 500 nm, which is 23 times larger than the sample without the Gd3Fe5O12 buffer layer, and as high as 90.1% of the single crystalline Bi2Gd1Fe5O12 thin films on an (111) SGGG single crystal substrate. These results are promising for applications in optical waveguide isolators and magneto-optic spatial light modulators.
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Bismuth substituted rare-earth iron garnet (Bi:RIG) films were prepared on (111) gadolinium gallium garnet (GGG) and glass substrates b laser ablation using the ArF excimer laser. Crystal structure of the garnet phase was obtained above the substrate temperature of about 500° C on GGG substrate without postdeposition annealing and on glass substrate with postdeposition rapid thermal annealing. Films with the easy magnetization axis normal to the film plane were obtained for Bi:DyIG and Ga- or Al-substituted Bi-YIG on GGG substrate. The Faraday hyster- esis loops and the magnetic domain were observed. On the other hand, the easy magnetization axis normal to the film plane was obtained for Bi:DyIG films on the glass substrate with postdeposition rapid thermal annealing.
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Ce-substituted yttrium iron garnet films are epitaxially grown in situ on (111)-oriented substrates of Gd3Sc2Ga3O12 garnet by conventional rf diode sputtering for application to magneto-optic waveguide devices in optical communication systems. The lattice constant of the substrates is larger than that of the previously used (Gd,Ca)3(Ga,Mg,Zr)5O12 garnet substrates whose lattice constant is smaller than that of the films. The lowest ever reported propagation losses of 9.7 dB/cm in the TE mode and 5.8 dB/cm in the TM mode are obtained for a film thickness of 0.5 μm at λ=1.55 μm.
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