Performance test of commercial InGaAs detectors in low temperature
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Abstract:
The conventional response band of Indium Gallium Arsenide (InGaAs) detectors ranges from 0.9 to 1.7μm. The J atmospheric window (1.25μm) in infrared astronomy falls at the center of the response band of InGaAs detectors, making them widely used in this spectral region for infrared astronomy. Three representative Chinese-made Indium Gallium Arsenide focal plane arrays (InGaAs FPAs) were selected, and corresponding interface circuits were designed to match the testing system. Key performance indicators such as dark current, gain, and readout noise were tested.Keywords:
Indium gallium arsenide
Indium arsenide
Semiconductor detector
Deep-level transient spectroscopy
Trap (plumbing)
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Surface leakage current is a significant source of dark current in conventional narrow-gap p-n junction photodetectors. It is shown that the nBn photodetector, which was originally designed to eliminate dark current arising from generation-recombination mechanisms, also effectively eliminates surface leakage currents. The result is a measured dark current lower by over six orders of magnitude than that of the InAs p-n photodetector for device temperatures of 140 K.
Leakage (economics)
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A TiO2 MSM UV photodetector has been extensively researched and exhibits many good properties such as stability and a large ratio of light to dark current. However, it suffers from a high dark current and slow response and recovery. In this work, an MSM UV photodetector based on a TiO2/PbTiO3 heterojunction was fabricated by a sol-gel method. Spontaneous polarization of ferroelectric perovskite PbTiO3 can deplete carriers and accelerate the separation and transport of photo-generated carriers. The photodetector showed enhanced performances, including an ultra-low dark current (1.146 19 × 10−11 A), an improving ratio of light to dark current, as well as short response and recovery times (decreasing to 65 and 81 ms). These results indicate the potential in the combination of ferroelectric perovskite PbTiO3 with traditional wide bandgap semiconductor materials to fabricate high-performance UV photodetectors.
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Three kinds of CMOS compatible photosensors, P+/Nwell photodetector, Nwell/Psub photodetector and N+/Psub photodetector, were designed by using SMIC 0.18μm standard CMOS technology. Some critical parameters, such as responsivity, dark current and maximal response wavelength were analyzed based on the mathematic model established. The influences of some technology parameters, such as doping concentration, junction depth, were pointed out as well. The experiment results indicate that P+/Nwell photodetector can reach a maximal sensitivity of 0.08 A/W at 460nm with 55nA/cm2 dark current, Nwell/Psub photodetector has a maximal sensitivity of 0.35A/W at 580nm with 64nA/cm2 dark current and N+/Psub photodetector attains a maximal sensitivity of 0.29 A/W at 580nm with 600nA/cm2 dark current. The test results show that the photodetectors designed agree with theoretical analysis basically and have prominent performance on sensitivity and response wavelength.
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Large-area metal–semiconductor–metal (MSM) solar-blind photodetectors with a device area of 5×5 mm2 have been fabricated on Al0.4Ga0.6N/AlN/sapphire epistructure. The photodetector exhibits ultra-low dark current density of 3.2×10−12 A/cm2 under 20 V bias and a corresponding breakdown voltage of up to 385 V. The solar-blind/ultraviolet rejection ratio of the photodetector is more than four orders of magnitude with a maximum quantum efficiency of 28% at 275 nm.
Ultraviolet
Quantum Efficiency
Biasing
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Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.
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Low noise current is critical for achieving high-detectivity organic photodetectors. Inserting charge-blocking layers is an effective approach to suppress the reverse-biased dark current. However, in solution-processed organic photodetectors, the charge-transport material needs to be dissolved in solvents that do not dissolve the underneath light-absorbing layer, which is not always possible for all kinds of light-absorbing materials developed. Here, we introduce a universal strategy of transfer-printing a conjugated polymer, poly(3-hexylthiophene) (P3HT), as the electron-blocking layer to realize highly sensitive photodetectors. The transfer-printed P3HT layers substantially and universally reduced the reverse-biased dark current by about 3 orders of magnitude for various photodetectors with different active layers. These photodetectors can detect the light signal as weak as several picowatts per square centimeter, and the device detectivity is over 1012 Jones. The results suggest that the strategy of transfer-printing P3HT films as the electron-blocking layer is universal and effective for the fabrication of sensitive organic photodetectors.
Photodiode
Active layer
Specific detectivity
Charge carrier
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Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.
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