Influence of Ce, Pr, and Gd Doping on Optical and Electrochemical Energy Storage Capabilities of Ca0.15Zr0.85O1.85
0
Citation
27
Reference
10
Related Paper
Abstract:
The quest to find stable energy materials is ongoing. In this study, we investigate the influence of lanthanoid doping, specifically, Ce, Gd, and Pr, on the storage of optical and electrochemical energy at room temperature. The samples were prepared using the sol–gel method at room temperature, followed by annealing at 550 °C for 2 h to enhance crystallinity and phase purity. All samples crystallize in the rare Ca0.15Zr0.85O1.85 phase with a cubic crystal structure. The undoped sample exhibits a prominent photoluminescence emission at 345 nm (UV-A region). In contrast, the lanthanoid-doped samples show significant emissions at 310 and 355 nm (UV-A and UV-B regions). Lifetime studies were performed to understand the kinetics of charges in their excited state. All samples display strong persistent luminescence (PersL) in the UV region for at least 15 min due to the trapping, detrapping, and retrapping of charges at room temperature. Additionally, room temperature-induced tunneling is observed in the Pr-doped sample, which also demonstrates a strong redox peak at 0.25 V during electrochemical measurements. All samples exhibit a quasi-rectangular shape in the potential range of −1.0 to 1.0 V across different scan rates. Among the doped samples, the Pr-doped sample shows the highest conductivity, while the Ce-doped sample exhibits the highest resistance. Overall, we have successfully incorporated UV-B PersL into these samples, and with Pr doping, the conductivity of the material is improved, suggesting the potential use of this material for multifunctional energy applications.Keywords:
Optical storage
In order to solve the problem of high concentration trap doping in the active layer of organic detector, a blending doping method is proposed in this paper. The influence of the doping concentration of C60:C70 on the trap concentration in the P3HT:PC61BM active layer and the optoelectronic performance of the detector are studied through experiments. It founds that the maximum doping concentration and trap concentration of active layer could arrive to 1.5 wt% and 3.26 × 1018 cm−3 respectively after blending doping, which increased by 50% and one order of magnitude compared with the maximum doping concentration of single C60 (doping concentration:1.0 wt%, trap concentration: 5.83 × 1017 cm−3), and the external quantum efficiency is increased by 8 folds from 1067.48% to 8510.17%. The result shows that the doping concentration and the trap concentration can be greatly improved using the blending doping method, and thereby the high concentration trap doping of the active layer can be achieved.
Trap (plumbing)
Active layer
Cite
Citations (6)
The effect of Mg doping on the electrical properties of pure ZnO and Al-doped ZnO, Al-2N co-doped ZnO have been investigated. It was found that after Mg doping, the bandgap values increased with the increase of Mg doping concentration. After Mg was doped into the Al doped ZnO structure, it was found that as the Mg doping contents increased, the CBM gradually moved toward the higher energy direction, the VBM gradually moved toward the lower energy direction, resulting in an increase of the band gap. After Mg was doped into the Al-2N co-doped structure, the band structure of Al-2N-Mg co-doped ZnO had a shallow acceptor level, indicating that the incorporation of Mg is beneficial for the electrical properties of p-type ZnO. The absorption of Al-2N-Mg co-doped ZnO is higher than that of Al-2N co-doped ZnO in the range of the visible region, which has a significant meaning for the applications on solar cell devices.
Acceptor
Cite
Citations (0)
Doping processes into semiconductors by excimer and Ar ion lasers are reviewed. Doping characteristics and mechanism inherently depend on the choice of laser and doping gas. Characteristics of two kinds of doping, doping from photochemical decomposition of gas and doping from adsorbed layers, are described. Calculation of doping profiles is performed with the involvement of melt depth and impurity diffusion.
Cite
Citations (0)
Eu-doped CaS phosphors were prepared from sulfurization of CaCO3 in H2S gas without flux. The doping of Eu activator was conducted in two different modes: synchronous doping during sulfurization of CaCO3 and subsequent doping by vacuumly calcinning pure CaS and Eu2O3. Comparison of the as-prepared samples indicated that subsequent doping led to larger optimum Eu concentration and lower red emission intensity than synchronous doping. The different luminescence properties are ascribed to the different activator distributions in CaS host induced by different doping modes, and the uniform distribution resulted from synchronous doping is beneficial to the luminescence of the phosphor.
Cite
Citations (0)
The effect of Mg doping on the electrical properties of pure ZnO and Al-doped ZnO, Al-2N co-doped ZnO have been investigated. It was found that after Mg doping, the bandgap values increased with the increase of Mg doping concentration. After Mg was doped into the Al doped ZnO structure, it was found that as the Mg doping contents increased, the CBM gradually moved toward the higher energy direction, the VBM gradually moved toward the lower energy direction, resulting in an increase of the band gap. After Mg was doped into the Al-2N co-doped structure, the band structure of Al-2N-Mg co-doped ZnO had a shallow acceptor level, indicating that the incorporation of Mg is beneficial for the electrical properties of p-type ZnO. The absorption of Al-2N-Mg co-doped ZnO is higher than that of Al-2N co-doped ZnO in the range of the visible region, which has a significant meaning for the applications on solar cell devices.
Acceptor
Cite
Citations (0)
Arbitrary doping profiles with abrupt transitions have been produced in Si MBE films by means of Sb ion doping. The ion doping could control the doping level in the films over the range 1016–1020 cm-3. The accuracy of controlling the doped layer thickness was within a couple of 100 A. The doping levels of the doped Sb determined by neutron activation analysis, backscattering measurement, and four point probe technique were all in good agreement. It was also found from the doping profiles determined by the three measurements that the Sb atoms doped by the ion doping did not segregate to the surface of the epitaxial film.
Cite
Citations (0)
Cite
Citations (36)
Cite
Citations (16)
This chapter contains sections titled: Introduction Electrochemical Doping Chemical Doping In-Situ Doping Radiation-Induced Doping or Photo Doping Charge Injection Doping
Cite
Citations (3)
By using first principles, the p-doping mechanism of two-dimensional GaN with buckled structure is discussed in detail under various doping configurations, including different doping elements, positions, and concentrations. The research implies that difference in electronegativity between three doping elements: Be, Zn, Mg and two-dimensional GaN results in a significant change in atomic structure and charge distribution. When Be, Zn, and Mg atoms are doped at Ga position, doping process in two-dimensional GaN is easier because their formation energies are 1.684, 4.630, and 3.390 eV, respectively, which are lower than doped at N position. In addition, Ga doping site is more favorable for p-type doping because bandgap and work function of two-dimensional GaN are reduced and it would convert into p-type semiconductor when a Ga atom is replaced by dopants.
Electronegativity
Wide-bandgap semiconductor
Position (finance)
Cite
Citations (16)