Stabilizing Cu+ species by Al-doping with enhanced *CO coverage for highly efficient electrochemical CO2 reduction to C2+ products
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The copper-based oxide catalysts have garnered significant attention due to their remarkable capacity for selectively producing multicarbon (C2+) compounds in CO2 reduction by renewable-electricity-driven. However, the Cu+ species in catalysts...This paper deals with approaches to knowledge reduction in inconsistent decision systems. The judgment theorem with respect to attribute reduction is obtained, from which the novel approaches to maximum distribution reduction, distribution reduction and possible reduction are presented. In addition, its time complexity is analyzed in detail. Experimental results show that the reduction algorithms are more efficient than those existing algorithms.
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The effect of Mg doping on the electrical properties of pure ZnO and Al-doped ZnO, Al-2N co-doped ZnO have been investigated. It was found that after Mg doping, the bandgap values increased with the increase of Mg doping concentration. After Mg was doped into the Al doped ZnO structure, it was found that as the Mg doping contents increased, the CBM gradually moved toward the higher energy direction, the VBM gradually moved toward the lower energy direction, resulting in an increase of the band gap. After Mg was doped into the Al-2N co-doped structure, the band structure of Al-2N-Mg co-doped ZnO had a shallow acceptor level, indicating that the incorporation of Mg is beneficial for the electrical properties of p-type ZnO. The absorption of Al-2N-Mg co-doped ZnO is higher than that of Al-2N co-doped ZnO in the range of the visible region, which has a significant meaning for the applications on solar cell devices.
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Doping processes into semiconductors by excimer and Ar ion lasers are reviewed. Doping characteristics and mechanism inherently depend on the choice of laser and doping gas. Characteristics of two kinds of doping, doping from photochemical decomposition of gas and doping from adsorbed layers, are described. Calculation of doping profiles is performed with the involvement of melt depth and impurity diffusion.
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Attribute reduction is the most important technique of rough set.Once it gets whole reductions,the reasoning capability under multi attribute absent can behave well.How to get whole reductions based on reduction's concept is discussed.After getting rough reduction by pruning,and whole really reductions with back elimination,reduction pruning and discernibility matrix based heuristic reduction algorithm are compared.The experimental results show reduction-pruning algorithm is effective.
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The effect of Mg doping on the electrical properties of pure ZnO and Al-doped ZnO, Al-2N co-doped ZnO have been investigated. It was found that after Mg doping, the bandgap values increased with the increase of Mg doping concentration. After Mg was doped into the Al doped ZnO structure, it was found that as the Mg doping contents increased, the CBM gradually moved toward the higher energy direction, the VBM gradually moved toward the lower energy direction, resulting in an increase of the band gap. After Mg was doped into the Al-2N co-doped structure, the band structure of Al-2N-Mg co-doped ZnO had a shallow acceptor level, indicating that the incorporation of Mg is beneficial for the electrical properties of p-type ZnO. The absorption of Al-2N-Mg co-doped ZnO is higher than that of Al-2N co-doped ZnO in the range of the visible region, which has a significant meaning for the applications on solar cell devices.
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This chapter contains sections titled: Introduction Electrochemical Doping Chemical Doping In-Situ Doping Radiation-Induced Doping or Photo Doping Charge Injection Doping
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By using first principles, the p-doping mechanism of two-dimensional GaN with buckled structure is discussed in detail under various doping configurations, including different doping elements, positions, and concentrations. The research implies that difference in electronegativity between three doping elements: Be, Zn, Mg and two-dimensional GaN results in a significant change in atomic structure and charge distribution. When Be, Zn, and Mg atoms are doped at Ga position, doping process in two-dimensional GaN is easier because their formation energies are 1.684, 4.630, and 3.390 eV, respectively, which are lower than doped at N position. In addition, Ga doping site is more favorable for p-type doping because bandgap and work function of two-dimensional GaN are reduced and it would convert into p-type semiconductor when a Ga atom is replaced by dopants.
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