Humidity-induced self-powered photodetection through Bi2Te3/MoS2 nanohybrid material deposited on a flexible substrate
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Photodetection
We assert that state reduction processes in different types of photodetection experiments are described by using different kinds of ladder operators. A special model of discrete photodetection is developed by the use of superoperators which are based on the Susskind-Glogower raising and lowering operators.
Photodetection
Raising (metalworking)
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Photodetection
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Photodetection
Visible spectrum
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Abstract Photodetection using semiconductors is critical for capture, identification, and processing of optical information. Nowadays, broadband photodetection is limited by the underdeveloped mid‐IR photodetection at room temperature (RT), primarily as a result of the large dark currents unavoidably generated by the Fermi–Dirac distribution in narrow‐bandgap semiconductors, which constrains the development of some modern technologies and systems. Here, an electronic‐structure strategy is proposed for designing ultrabroadband covering mid‐ and even far‐IR photodetection materials operating at RT and a layered MoS 2 is manifested with an engineered bandgap of 0.13 eV and modulated electronic state density. The sample is designed by introducing defect energy levels into layered MoS 2 and its RT photodetection is demonstrated for wavelengths from 445 nm to 9.5 µm with an electronic state density‐dependent peak photoresponsivity of 21.8 mA W −1 in the mid‐IR region, the highest value among all known photodetectors. This material should be a promising candidate for modern optoelectronic devices and offers inspiration for the design of other optoelectronic materials.
Photodetection
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Balanced photodetection endows photoconductive detectors with high photoresponsivity and fast photoresponse speed. Here, we report a mixed-dimensional phototransistor consisting of CsPbBr3 colloidal quantum dots and few-layer MoS2 that is capable of balanced photodetection. In the heterojunction, the generation region and the transport channel of carriers are separated by the built-in electric field. Thus, the device exhibits a high photoresponsivity of 104 A W–1 and a fast photoresponse speed of 8 ms. All of these results demonstrate that the mixed-dimensional phototransistor is successful in balanced photodetection, and it has great application potential in communication and imaging.
Photodetection
Photodiode
Photoconductivity
Quantum Efficiency
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Photodetection
Hamiltonian (control theory)
Canonical transformation
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Abstract Ultraviolet (UV) photodetection is widely used in different fields, among which the photodetection with low detection limit has attracted strong interest due to broad applications in various fields including military security, medical diagnosis, and chemical analysis. Recently, two‐dimensional (2D) hybrid perovskites are promising candidates for UV photodetection owing to their superior semiconducting properties and solution accessibility. Here, UV photodetection with low detection limit is successfully realized by using high‐quality 2D hybrid perovskite single crystals, (BA) 2 PbBr 4 ( 1 , BA = C 4 H 9 NH 3 + ). Grown via a delicate solution method, a high‐quality single crystal of 1 as large as 35 × 15 × 1 mm 3 is obtained with a low trap density of ≈10 10 cm −3 , and used to fabricate photodetectors hence exhibiting an ultra‐low dark current of 6.11 × 10 −13 A. The detector exhibits a considerable on/off ratio of ≈10 4 , an impressive detectivity up to 2.06 × 10 12 Jones, and a responsivity of 16.9 mA W −1 . Notably, due to the high‐crystalline quality and low dark current of 1 , the device shows remarkable photoresponse even under an extremely weak illumination of 80 nW cm −2 at the UV region. This work provides a promising candidate for sensitive UV photodetection and high‐performance photodetectors.
Photodetection
Ultraviolet
Crystal (programming language)
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Infrared radiation detection is significantly important in communication, imaging, and sensing fields.
Photodetection
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We propose a color-selective photodetection scheme through integration of Au nanoparticles with CdSe/ZnS quantum dot photodetectors. Preliminary experimental results confirm enhancement of photodetector external quantum efficiency at wavelengths near the plasmonic resonance of Au nanoparticles.
Photodetection
Plasmonic Nanoparticles
Quantum Efficiency
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Abstract Restacking the exfoliated 2D layered materials into complex heterostructures with new functionality has opened a new platform for materials engineering and device application. In this work, graphene sandwiched p‐GaSe/n‐WS 2 vertical heterostructures are fabricated for photodetection. The devices show excellent performance on photodetection from ultraviolet to visible wavelength range, including high photoresponsivity (≈149 A W −1 at 410 nm), short response time of 37 µs, and self‐powered photodetection. The scanning photocurrent microscopy is also employed to investigate the photocurrent generation in the heterojunction and a significant enhancement of the photoresponse is found in the overlapping region. The results suggest that the graphene sandwiched vertical heterojunctions are promising in future novel optoelectronic devices applications.
Photodetection
Photocurrent
Ultraviolet
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