III-V-on-Silicon-Nitride Mode-Locked Lasers
Stijn CuyversArtur HermansStijn PoelmanCamiel Op de BeeckBahawal HaqGünther RoelkensKasper Van GasseBart Kuyken
1
Citation
8
Reference
10
Related Paper
Citation Trend
Abstract:
We demonstrate heterogeneously integrated passively mode-locked lasers by microtransfer printing III-V semiconductor optical amplifiers on a silicon nitride photonic chip. A dense and low-noise optical comb is generated, enabling unparalleled precision for on-chip spectroscopy.Keywords:
Hybrid silicon laser
Mode (computer interface)
Abstract : The production of short-channel Metal-Insulator-Semi-conductor (MIS) transistors will necessitate the use of gate insulators which can be made substantially thinner than layers of silicon dioxide can be grown. One possible insulator would be thermally grown silicon nitride. The use of silicon nitride insulators could prove to be advantageous in the development of Very Large Scale Integrated Circuits (VLSIC's) since silicon nitride offers a slightly higher dielectric constant and is a better passivation layer than silicon dioxide. Transistors fabricated using thin thermally grown silicon nitride could possibly be radiation hard. The objectives of this project were to: design and build an open tube system capable of thermally growing silicon nitride on silicon using ammonia as the reactant gas; study the growth parameters of the system, optimize growth conditions and produce good thermal silicon nitride films on silicon; and fabricate simple capacitors and transistors using the silicon nitride films.
LOCOS
Hybrid silicon laser
Strained silicon
Nanocrystalline silicon
Cite
Citations (0)
Abstract : This report discusses the findings from one phase of our ongoing work to evaluate materials for Army bearing systems. The objective of this phase is to determine the response and longevity of various silicon nitride Si3N4 materials to rolling contact fatigue (RCF) using hybrid and all-ceramic systems. Tests were conducted under regular lubrication and lubrication-starved conditions for extended periods. A correlation between RCF life and the hardness, strength, and microstructure of each silicon nitride is made. The various silicon nitride materials evaluated in these RCF tests were selected on the basis of providing a varied response to the RCF parameters and conditions used.
Characterization
Cite
Citations (1)
Abstract Silicon nitride has been prepared by heating pure silicon in purified nitrogen at 1450°. X ‐ray studies showed the presence of two nitrides, and a method was therefore devised to separate them. Although these nitrides differ in their crystal structure, they have the same compositions, corresponding to Si3N4. A few chemical tests were performed on finely divided silicon nitride prepared at or above 145°. Several alloys containing various proportions of silicon were nitrided under different conditions, and the X ‐ray diffraction patterns of the nitrides extracted from these alloys were found to be in complete agreement with that of α‐Si 3 N 4 . The diffraction lines obtained from the nitrided alloy prior to any chemical treatment gave nitride lines which did not correspond to those of the α‐Si 3 N 4 or β‐Si 3 N 4 .
Cite
Citations (58)
Cite
Citations (7)
We have developed a modified solid-state metathesis method by selecting metal oxides and Li3N as precursors to prepare nitrides in sealed ampoules or tube furnace, which provide a general, facile, and high-efficient route to most binary metal nitrides including III-nitrides, transition metal nitrides, rare-earth nitrides, and some ternary metal nitrides. A two-step process is involved in this route and thermodynamical favored byproduct Li2O serves as a potent driving force, enhancing the nitrides formation process. Our results show that this route offers an attractive preparative route to nitrides due to the wide availability of metal oxides, high yield, and relatively simple operation.
Cite
Citations (31)
Abstract In order to reveal the friction properties and improve the wear resistance of silicon nitride ceramic materials, a calculation model of static friction coefficient of silicon nitride ceramic is established. The influence law of contact surface roughness on friction coefficient under different contact load and friction speed is analyzed. The test and the results verification are carried out by using Friction Wear Testing Machine. Then the dry friction process of silicon nitride ceramic is simulated based on UDEC, and the wear failure form is analyzed. In the dry friction process of silicon nitride ceramics, the coefficient of friction is directly proportional to the contact surface roughness, inversely proportional to the contact load, and directly proportional to the friction speed. There is a critical value for the roughness of friction sub-contact surface. Silicon nitride ceramics can self-lubricate by friction when the contact surface roughness is less than this critical value. In the dry friction process, the oxidation of SiO2 has little effect on the friction. The wear surface of silicon nitride ceramics consists of shear failure units and tensile failure units, and their formation is related to the surface roughness. The results play an important role in revealing the frictional properties of engineering ceramics such as silicon nitride, as well as helpful to improve the wear resistance and service life of ceramic materials.
Cite
Citations (16)
Silicon nitride bearing balls of 12.7 rom diameter were used to evaluate the wear and friction reducing characteristics of admixtures of paraffin oil with 0.5% w/v solution of 1,5-di-p-methoxyphenyl- 2,4-dithiomalonamide and 3,5-di-p-chIorophenrlimino-l ;2,4-dithiazolidine in a four ball test. Both the additives were found to be quite active in reducing wear-scar diameter and friction coefficient viUues and exhibited higher values of flash temperature parameter and load wear index. A comparative EP activity evaluation of both the additives using silicon nitride and alloy steel balls was undertaken to assess better applicability of silicon nitride balls in a four ball tel!t.
Ball (mathematics)
Coefficient of friction
Cite
Citations (0)
Durable silicon–silicon nitride films have been created that exhibit low angle shift and reduced s and p polarization separation. The more common silicon dioxide – metal oxide films often have performance problems at large angles. They are inherently sensitive to angle of incidence and thus are prone to alignment issues and cone angle effects of the incident light. In contrast, silicon–silicon nitride films have much higher average optical indices and thus are ideal for applications were spectral form and placement are critical at large angles of incidence and when cone angle considerations are important. In addition, the difference in the spectral performance between the s and p polarizations is greatly reduced with silicon–silicon nitride films, offering more alignment flexibility when polarized sources are required. The silicon–silicon nitride films were found to be environmentally durable, and can be applied to a variety of substrates and substrate geometries, including plano, spherical domes, and complex parabolic surfaces.
LOCOS
Hybrid silicon laser
Silicon oxide
Cite
Citations (0)
We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).
Hybrid silicon laser
LOCOS
Waveguide
Strained silicon
Cite
Citations (66)
ESCA is used to characterize silicon nitride surface oxidation. Si 2p, N 1s, and O 1s binding energies and photoelectron line intensities of oxidized nitride films are compared with the corresponding lines from thick reference films of silicon, silicon nitride, silcon dioxide, and a series of oxynitrides. Rapid initial oxidation of silicon nitride surfaces occurs at room temperature on exposure of nitride films to air. A graded oxidized nitride film forms between the film surface and the nitride. Similarly, oxynitride films with gradations in composition are obtained upon oxidation of nitride films at high temperatures.
Silicon oxynitride
Silicon dioxide
LOCOS
Cite
Citations (234)