Microstructural Welding Engineering of Carbon Nanotube/Polydimethylsiloxane Nanocomposites with Improved Interfacial Thermal Transport
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Abstract Carbon nanotube (CNT) reinforced polymer nanocomposites with high thermal conductivity show a promising prospect in thermal management of next‐generation electronic devices due to their excellent mechanical adaptability, outstanding processability, and superior flexibility. However, interfacial thermal resistance between individual CNT significantly hinders the further improvement in thermal conductivity of CNT‐reinforced nanocomposites. Herein, an interfacial welding strategy is reported to construct graphitic structure welded CNT (GS‐w‐CNT) networks. Notably, the obtained GS‐w‐CNT/polydimethylsiloxane (PDMS) nanocomposite with a GS loading of 4.75 wt% preserves a high thermal conductivity of 5.58 W m −1 K −1 with a 410% enhancement as compared to a pure CNT/PDMS nanocomposite. Molecular dynamics simulations are utilized to elucidate the effect of interfacial welding on the heat transfer behavior, revealing that the GS welding degree plays an important role in reducing both phonon scattering in the GS‐w‐CNT structure and interfacial thermal resistance at the interfaces between CNT. The unique welding strategy provides a new route to optimize the thermal transport performance in filler reinforced polymer nanocomposites, promoting their applications in next‐generation microelectronic devices.Keywords:
Interfacial thermal resistance
Polydimethylsiloxane
Polymer nanocomposite
Microelectronics
Interfacial thermal resistance
Phonon scattering
Thermal transmittance
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Interfacial thermal resistance
Thermal grease
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Cooling electronic devices to cryogenic temperatures (< 77 K) is crucial in various scientific and engineering domains. Efficient cooling involves the removal of heat generated from these devices through thermal contact with either a liquid cryogen or a dry cryostat cold stage. However, as these devices cool, thermal boundary resistance, also known as Kapitza resistance, hinders the heat flow across thermal interfaces, resulting in elevated device temperatures. In transistors, the presence of passivation layers like Silicon Nitride (SiN) introduces additional interfaces that further impede heat dissipation. This paper investigates the impact of passivation layer thickness on Kapitza resistance at the interface between a solid device and liquid nitrogen. The Kapitza resistance is measured using a capacitance thermometer that has been passivated with SiN layers ranging from 0 to 240 nm. We observe that Kapitza resistance increases with increasing passivation thickness.
Passivation
Interfacial thermal resistance
Cryostat
Liquid nitrogen
Computer cooling
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The interfacial thermal resistance determines condensation-evaporation processes and thermal transport across material-fluid interfaces. Despite its importance in transport processes, the interfacial structure responsible for the thermal resistance is still unknown. By combining nonequilibrium molecular dynamics simulations and interfacial analyses that remove the interfacial thermal fluctuations we show that the thermal resistance of liquid-vapor interfaces is connected to a low density fluid layer that is adsorbed at the liquid surface. This thermal resistance layer (TRL) defines the boundary where the thermal transport mechanism changes from that of gases (ballistic) to that characteristic of dense liquids, dominated by frequent particle collisions involving very short mean free paths. We show that the thermal conductance is proportional to the number of atoms adsorbed in the TRL, and hence we explain the structural origin of the thermal resistance in liquid-vapor interfaces.
Interfacial thermal resistance
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Abstract Cooling electronic devices to cryogenic temperatures (< 77 K) is crucial in various scientific and engineering domains. Efficient cooling involves the removal of heat generated from these devices through thermal contact with either a liquid cryogen or a dry cryostat cold stage. However, as these devices cool, thermal boundary resistance, also known as Kapitza resistance, hinders the heat flow across thermal interfaces, resulting in elevated device temperatures. In transistors, the presence of passivation layers like Silicon Nitride (SiN) introduces additional interfaces that further impede heat dissipation. This paper investigates the impact of passivation layer thickness on Kapitza resistance at the interface between a solid device and liquid nitrogen. The Kapitza resistance is measured using a capacitance thermometer that has been passivated with SiN layers ranging from 0 to 240 nm. We observe that Kapitza resistance increases with increasing passivation thickness.
Passivation
Interfacial thermal resistance
Cryostat
Liquid nitrogen
Computer cooling
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This paper presents the result of calculating the thermal resistance (Kapitza resistance) for the Si/SiO2(α-quartz) interface using acoustic and diffuse misfit models. The results obtained were verified using data from published articles, which made it possible to generally judge the adequacy of the models used.
Interfacial thermal resistance
Interface (matter)
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Abstract Cooling electronic devices to cryogenic temperatures (< 77 K) is crucial in various scientific and engineering domains. Efficient cooling involves the removal of heat generated from these devices through thermal contact with either a liquid cryogen or a dry cryostat cold stage. However, as these devices cool, thermal boundary resistance, also known as Kapitza resistance, hinders the heat flow across thermal interfaces, resulting in elevated device temperatures. In transistors, the presence of passivation layers like silicon nitride (SiN) introduces additional interfaces that further impede heat dissipation. This paper investigates the impact of passivation layer thickness on Kapitza resistance at the interface between a solid device and liquid nitrogen. The Kapitza resistance is measured using a capacitance thermometer that has been passivated with SiN layers ranging from 0 to 240 nm. We observe that Kapitza resistance increases with increasing passivation thickness.
Passivation
Interfacial thermal resistance
Cryostat
Liquid nitrogen
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In this paper, we will present and discuss our results on the thermal interface resistances of the thermal interface materials based on vertically aligned carbon nanotubes. In this system, the total interface resistance is the sum of thermal resistances created by the contact between the growth surface and the CNTs, the intrinsic resistance of the CNTs array, and the contact between the loose end of the CNTs and the opposite substrate. The latter is reported to be the limiting factor in the optimization of the global interface resistance. We present here thermal resistances measurements of multilayered VACNT samples. In particular, the resitances obtained with a heated polymer film as an adhesive layer at the CNT/superstrate interface are compared with the direct CNT/superstrate contact. It is shown that the use of a polymer as interface material, despite its low thermal conductivity, leads to an improvement of the total thermal resistance. The CNT length dependant resistance measurements allow the extraction of the CNT turf thermal conductivity as well as the contact resistances. Finally, the origin of the improvement is discussed using these results.
Interfacial thermal resistance
Thermal grease
Contact resistance
Thermal contact
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Thermal Boundary Resistance Thermal boundary resistance is the largest impedance to heat transfer in many semiconductor devices. In article number 2100111, Christopher M. Stanley and co-workers demonstrate using first-principles simulations, that prevailing theory gives an incomplete picture of how heat is transferred at the interface. Unusually high-frequency modes (≈850cm-1) are found to carry 10% of the heat and reduce thermal boundary resistance by 26% at room temperature.
Interfacial thermal resistance
Interface (matter)
Thermal transmittance
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Due to their very high thermal conductivity carbon nanotubes have been found to be an excellent material for thermal management. Experiments have shown that the heaters coated with carbon nanotubes increase the heat transfer by as much as 60%. Also when nanotubes are used as filler materials in composites, they tend to increase the thermal conductivity of the composites. But the increase in the heat transfer and the thermal conductivity has been found to be much less than the calculated values. This decrease has been attributed to the interfacial thermal resistance between the carbon nanotubes and the surrounding material. MD simulations were performed to study the interfacial thermal resistance between the carbon nanotubes and the liquid molecules. In the simulations, the nanotube is placed at the center of the simulation box and a temperature of 300K is imposed on the system. Then the temperature of the nanotube is raised instantaneously and the system is allowed to relax. From the temperature decay, the interfacial thermal resistance between the carbon nanotube and the liquid molecules is calculated. In this study the liquid molecules under investigation are n-heptane, n-tridecane and n-nonadecane.
Interfacial thermal resistance
Thermal fluids
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