MSM UV photodetector with low dark current based on GaInO/SrTiO3 heterojunction
Zhengyu BiYupeng ZhangYongfeng ZhangXinyan LiuYan MaXin LiCaixia LiuYu ChenJingran ZhouShengping Ruan
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Abstract Here, it is first reported that a self‐powered photodetector based on a MoS 2 /CH 3 NH 3 PbI 3 vertical type heterojunction, which has responsivity of 60 mAW −1 and response/recovery time of 2149/899 ms. Under bias, it exhibits a photoswitching ratio exceeding 1522, fast response/recovery time of 205/206 ms, and high photoresponsivity of 68.11 AW −1 . The optoelectronic performances of the photodetector are closely related to the type of the MoS 2 /CH 3 NH 3 PbI 3 heterojunction, which acts as a hole (electron) transport field and can effectively decrease the recombination of holes and electrons. Additionally, the MoS 2 /CH 3 NH 3 PbI 3 planar type heterojunction is also built to compare with the vertical type in optoelectronics behavior. Due to the existence of internal field, the properties of vertical type photodetector are better than those of the planar type which also presents good performance with on/off ratio up to 1476, photoresponsivity of 28 AW −1 , and response rate of 356/204 ms. These results pave a new way to form an ultrahigh performance MoS 2 /CH 3 NH 3 PbI 3 heterojunction, hold the promise for construction of a self‐powered photodetector, and develop promising atomically thin MoS 2 heterostructure device for photovoltaic and optoelectronic applications.
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Nanowire photodetectors, which have the advantages of fast response and high photoelectric conversion efficiency, can be widely applied in various industries. However, the rich surface states result in large dark current and can hinder the development of high-performance nanowire photodetectors. In this paper, the influence and mechanism of sulfur surface passivation on the dark current of a single GaAs nanowire photodetector have been studied. The dark current is significantly reduced by about 30 times after surface passivation. We confirm that the origin of the reduction of dark current is the decrease in the surface state density. As a result, a single GaAs nanowire photodetector with low dark current of 7.18 × 10−2 pA and high detectivity of 9.04 × 1012 cmHz0.5W−1 has been achieved. A simple and convenient way to realize high-performance GaAs-based photodetectors has been proposed.
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A TiO2 MSM UV photodetector has been extensively researched and exhibits many good properties such as stability and a large ratio of light to dark current. However, it suffers from a high dark current and slow response and recovery. In this work, an MSM UV photodetector based on a TiO2/PbTiO3 heterojunction was fabricated by a sol-gel method. Spontaneous polarization of ferroelectric perovskite PbTiO3 can deplete carriers and accelerate the separation and transport of photo-generated carriers. The photodetector showed enhanced performances, including an ultra-low dark current (1.146 19 × 10−11 A), an improving ratio of light to dark current, as well as short response and recovery times (decreasing to 65 and 81 ms). These results indicate the potential in the combination of ferroelectric perovskite PbTiO3 with traditional wide bandgap semiconductor materials to fabricate high-performance UV photodetectors.
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Three kinds of CMOS compatible photosensors, P+/Nwell photodetector, Nwell/Psub photodetector and N+/Psub photodetector, were designed by using SMIC 0.18μm standard CMOS technology. Some critical parameters, such as responsivity, dark current and maximal response wavelength were analyzed based on the mathematic model established. The influences of some technology parameters, such as doping concentration, junction depth, were pointed out as well. The experiment results indicate that P+/Nwell photodetector can reach a maximal sensitivity of 0.08 A/W at 460nm with 55nA/cm2 dark current, Nwell/Psub photodetector has a maximal sensitivity of 0.35A/W at 580nm with 64nA/cm2 dark current and N+/Psub photodetector attains a maximal sensitivity of 0.29 A/W at 580nm with 600nA/cm2 dark current. The test results show that the photodetectors designed agree with theoretical analysis basically and have prominent performance on sensitivity and response wavelength.
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Effect of interdiffusion on dark current response of GaInP/GaAs quantum well infrared photodetectors
The dark current response of interdiffused GaInP/GaAs quantum well intersubband infrared photodetectors is theoretically analysed for the case of group-III-only interdiffusion. The abrupt carrier confinement profile that is maintained after interdiffusion exhibits an increase in barrier height, and a significant reduction in the dark current of the interdiffused photodetector can be achieved.
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Large-area metal–semiconductor–metal (MSM) solar-blind photodetectors with a device area of 5×5 mm2 have been fabricated on Al0.4Ga0.6N/AlN/sapphire epistructure. The photodetector exhibits ultra-low dark current density of 3.2×10−12 A/cm2 under 20 V bias and a corresponding breakdown voltage of up to 385 V. The solar-blind/ultraviolet rejection ratio of the photodetector is more than four orders of magnitude with a maximum quantum efficiency of 28% at 275 nm.
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In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrates. This improvement in dark current is due to the careful removal of the defected Ge layer, which is formed with the initial growth of Ge on Si. The bulk leakage current density and surface leakage density of the GOI detector at −1 V are as low as 1.79 mA/cm2 and 0.34 μA/cm, respectively. GOI photodetectors with responsivity of 0.5 and 0.9 A/W at 1550 and 1310 nm wavelength are demonstrated. The optical performance of the GOI photodetector could be remarkably improved by integrating a tetraethylorthosilicate (TEOS) layer on the oxide side due to the better optical confinement and resonant cavity effect. These PDs with high performances and full compatibility with Si CMOS processes are attractive for applications in both telecommunications and monolithic optoelectronics integration on the same chip.
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