Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
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The effect of doping in the drift layer and the thickness and extent of extension beyond the cathode contact of a NiO bilayer in vertical NiO/β-Ga2O3 rectifiers is reported. Decreasing the drift layer doping from 8 × 1015 to 6.7 × 1015 cm−3 produced an increase in reverse breakdown voltage (VB) from 7.7 to 8.9 kV, the highest reported to date for small diameter devices (100 μm). Increasing the bottom NiO layer from 10 to 20 nm did not affect the forward current–voltage characteristics but did reduce reverse leakage current for wider guard rings and reduced the reverse recovery switching time. The NiO extension beyond the cathode metal to form guard rings had only a slight effect (∼5%) in reverse breakdown voltage. The use of NiO to form a pn heterojunction made a huge improvement in VB compared to conventional Schottky rectifiers, where the breakdown voltage was ∼1 kV. The on-state resistance (RON) was increased from 7.1 m Ω cm2 in Schottky rectifiers fabricated on the same wafer to 7.9 m Ω cm2 in heterojunctions. The maximum power figure of merit (VB)2/RON was 10.2 GW cm−2 for the 100 μm NiO/Ga2O3 devices. We also fabricated large area (1 mm2) devices on the same wafer, achieving VB of 4 kV and 4.1 A forward current. The figure-of-merit was 9 GW cm−2 for these devices. These parameters are the highest reported for large area Ga2O3 rectifiers. Both the small area and large area devices have performance exceeding the unipolar power device performance of both SiC and GaN.Keywords:
Non-blocking I/O
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Saturation current
We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K −1 ), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K −1 and 1.9 mV K −1 , respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.
Saturation current
Metal–semiconductor junction
Saturation (graph theory)
Atmospheric temperature range
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A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x 1016 cm-3) on heavily-doped (3.6 x 1018 cm-3) substrates, exhibited forward current density of 100A.cm-2 at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage (VB) of 650V. The on-resistance (RON) was 1.58 x 10-2 Ω.cm2, producing a figure of merit (VB2/RON) of 26.5 MW.cm-2. The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The on/off ratio was in the range 3.3 x 106 - 5.7 x 109 for reverse biases between 5 and 100V. The reverse recovery time was ∼30 ns for switching from +2V to -5V. The results show the capability of β-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions.
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Compared with Si, SiC has advantages of wide band gap, high critical electric field, high electron saturation velocity and high thermal conductivity, making SiC power devices develop rapidly in recent years. In the field of power diode, junction barrier Schottky (JBS) diode not only inherits the advantages of Schottky diode with high switching speed and low reverse recovery current, but also greatly improves the reverse breakdown voltage without increasing the leakage current of the device. In this paper, a 4H-SiC JBS with a breakdown voltage of 1200V was designed and simulated. The termination of the device adopts the field limiting ring (FLR) structure, and the parameters of the cell and FLR termination protection structure are optimized. With the optimized structure parameters, the TCAD simulation results show the reverse breakdown voltage of the designed 4H-SiC JBS can reach 1676.2 V without considering the terminal protection efficiency. And the breakdown voltage can reach 1542.7 V when considering the FLR termination structure. The termination protection efficiency is up to 92%.
Saturation current
Reverse leakage current
Wide-bandgap semiconductor
Leakage (economics)
Limiting
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The electrical behavior of metal–semiconductor–metal (MSM) Schottky barrier photodiode structures is analyzed by means of current–voltage measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. It is shown that, under these conditions, the logarithmic dependence of the reverse current on the reverse bias is a linear function and allows us to evaluate the barrier height, saturation current density, and junction ideality factor of the MSM-photodiode Schottky contact. The results are well consistent with experiment.
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Photodiode
Metal–semiconductor junction
Schottky effect
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The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodiode structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. It is shown that, under these conditions the I-V measurements can be used as a fast and simple method to evaluate the barrier height, saturation current density and junction ideal factor of the MSM-photodiode Schottky contact. The results are well consistent with experiment.
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Photodiode
Metal–semiconductor junction
Schottky effect
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The electrical properties of β-Ga2O3 Schottky Barrier Diode (SBD) depending on different Schottky metals are analyzed by numerical simulation for power electronic devices. SBDs based on β-Ga2O3 are formed by using three different Schottky metals: Ni, Au and Pt. Based on a comparison of the energy band diagram, the Schottky barrier height (ΦBn), the Schottky barrier lowering (∆Φ), the threshold voltage (Vbi), the depletion width (WD), maximum electric field (Emax), depletion charge (Q), the on-resistance (Ron), the breakdown voltage (VB), the reverse saturation current (Is), current-voltage (I-V) characteristics, capacitance-voltage (C-V) characteristics, power dissipation (PD) and rectification ratio (RR) are calculated for three metals (Ni, Au, Pt) at room temperature. In doing so, 1.5 × 1014 cm-3 of the effective doping concentration Nd is used. Finally, the obtained results are compared and the most suitable one is chosen to be used in power electronic devices. The results from this analysis agree with the fact that the metal choice is very important for SBDs.
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Metal–semiconductor junction
Band diagram
Equivalent series resistance
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A method is described of determining an equivalent circuit for solar cells which have degraded as a result of the formation of a rectifying Schottky barrier at the back contact. An excellent fit of experimental data has been achieved using SCEPTRE with an equivalent circuit derived from the shape of the measured current voltage characteristics. One key parameter of the Schottky barrier diode, the reverse saturation current, can be used to determine the barrier potential. The barrier potential increases as the cell is stressed with 0.5 volts being a typical experimentally determined value for a degraded cell.
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Metal–semiconductor junction
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Ohmic contact
Saturation current
Metal–semiconductor junction
Photodetection
Photodiode
Electrical contacts
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The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. Under these conditions, the logarithmic dependence of the reverse current on the reverse bias is a linear function and allows us to evaluate the barrier height, saturation current density and junction ideality factor of the MSM-diode Schottky contact.
Saturation current
Metal–semiconductor junction
Reverse leakage current
Saturation (graph theory)
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