Electron Trapping in N,N′-bis(1,2-dimethylpropyl)-1,4,5,8-Naphthalenetetracarboxylic Diimide Doped Poly(styrene)
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Abstract:
Electron mobilities have been measured in N,N′-bis(1,2-dimethylpropyl)-1,4,5,8-naphthalenetetracarboxylic diimide doped poly(styrene) containing a series of acceptor traps: 4-(cyanocarboethoxymethylidene)-2-methyl-1,4-naphthoquinone (MNQ), 3,5-dimethyl-3′,5′-diisopropyl-4,4′-diphenoquinone (DPQ), 4H-1,1-dioxo-2,6-di-tert-butyl-4-(dicyanomethylidene)thiopyran (TBS), N,N′-dicyano-2-tert-butyl-9,10-anthraquinonediimine (DCAQ), and 4H-1,1-dioxo-4-dicyanomethylidene-2-p-tolyl-6-phenylthiopyran (PTS). From reduction potential measurements, the trap depths of MNQ, DPQ, TBS, DCAQ, and PTS are 0.19, 0.19, 0.20, 0.35, and 0.40 eV, respectively. The mobilities decrease with increasing trap depth and trap concentration. The results are discussed within the framework of the Hoesterey-Letson formalism and the recent simulations of Wolf and co-workers and Borsenberger and co-workers.Keywords:
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A comprehensive simulation of the diimide hydrogenation process is carried out by taking into account the diimide generation reaction, the hydrogenation reaction, the side reaction between hydrogen peroxide and diimide, the disproportionation of diimide, and the diimide diffusion process. The relative magnitude of these rate constants with the diffusivity of diimide is estimated. It is found that the diimide diffusion interferes with the diimide hydrogenation of the latex of nitrile butadiene rubber (NBR), even though the particle diameter is as small as 72 nm. The interference of diimide diffusion makes it very difficult to achieve above 90% of hydrogenation without significant gel formation. Using core−shell latex with an NBR shell may help to solve the low hydrogenation efficiency and the gel formation at the same time.
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Nitrile rubber
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Oxidizing agent
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Three perylene diimide derivatives[1,7-dibromoperylene-3,4,9,10-tetracarboxylic acid bisanhydride(1),N,N'-didodecyl-1,7-dibromoperylene-3,4,9,10-tertracarboxylic acid diimide(2)and N,N'-didodecyl-1,7-di(4-t-butylphenoxy)perylene-3,4,9,10-tertracarboxylic acid diimide(3)] were synthesized from perylene-3,4,9,10-tetracarboxylic acid bisanhydride.The structures were characterized by 1H NMR and MS.The electrochemical and thermal properties of 2 and 3 were investigated by cyclic voltammetry and thermal analysis.The results showed that oxidation potential and reduction potential of 2 and 3 were 931.6 mV,170.1 mV and-1 028.0 mV,-1 941.0 mV,respectively.The 2 and 3 possess good thermal stability with high decomposition temperatures(300 ℃).
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Four perylene diimide derivatives,N,N'- didodecyl- 3,4,9,10- perylene dicarboximide, N,N'- dibutyl- 3,4,9,10- perylene dicarboximide,N,N'- dicyclohexyl- 3,4,9,10- perylene dicarboximide and N,N'- di( phenylmethyl)- 3,4,9,10- perylene dicarboximide were synthesized from 3,4,9,10- perylenetetracarboxylic dianhydride. The UV-Vis absorption spectrums of film of the perylene diimide derivative reveal the imide with flexible chain make the maximum absorption wavelength red-shift,while the imide with rigid chain make the maximum absorption wavelength blue-shift.
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Three novel perylene diimide derivatives,N,N′-di(1-pentylhexyl)-perylene-3,4,9,10-tertracarboxylic acid diimide,N,N′-di(1-pentylhexyl)-1,6,7,12-tetra(4-t-butylphenoxy)-perylene-3,4,9,10-tertracarboxylic acid diimide and N,N′-di(4-hexafluoroisopropanol phenyl)-1,6,7,12-tetra(4-t-butylphenoxy)-perylene-3,4,9,10-tertracarboxylic acid diimide,were synthesized from 3,4,9,10-perylenetetracarboxylic dianhydride.The structures were characterized by 1H NMR and MS.The optical properties of them were investigated by UV-Vis and fluorescence spectrum.
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In this study, for the first time, we introduced amino-substituted perylene diimide derivative (N-PDI) as an alternative electron transport layer (ETL) to replace the commonly used TiO2 in planar heterojunction perovskite solar cells.
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Based on first-principles calculations, we present a study for p-type ZnO doping. We find that by doping Fe into the p-type ZnO, the resulting FeZn–2NO complex is a stable acceptor that has shallower ε(0/−) transition level and lower formation energy in comparison with the isolated NO. Moreover, the FeZn–VZn pair is another resulting defect that is a shallow acceptor, for which the minimum formation energy occurs at the O-rich limit. As parent defects, FeZn behave as deep donor that do not lead to overcompensation. Therefore, Fe-related acceptor complexes may be promising candidates for p-type ZnO doping.
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Wide-bandgap semiconductor
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