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    Modulation of Cathodoluminescence by Surface Plasmons in Silver Nanowires
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    Abstract:
    The waveguide modes in chemically-grown silver nanowires on silicon nitride substrates are observed using spectrally- and spatially-resolved cathodoluminescence (CL) excited by high-energy electrons in a scanning electron microscope. The presence of a long-range, travelling surface plasmon mode modulates the coupling efficiency of the incident electron energy into the nanowires, which is observed as oscillations in the measured CL with the point of excitation by the focused electron beam. The experimental data are modeled using the theory of surface plasmon polariton modes in cylindrical metal waveguides, enabling the complex mode wavenumbers and excitation strength of the long-range surface plasmon mode to be extracted. The experiments yield insight into the energy transfer mechanisms between fast electrons and coherent oscillations in surface charge density in metal nanowires and the relative amplitudes of the radiative processes excited in the wire by the electron.
    Keywords:
    Cathodoluminescence
    Modulation (music)
    Controlled modulation of diameter along the axis of nanowires can enhance nanowire-based device functionality, but the potential for achieving such structures with arbitrary diameter ratios has not been explored. Here, we use a theoretical approach that considers changes in the volume, wetting angle, and three-dimensional morphology of seed particles during nanowire growth to understand and guide nanowire diameter modulation. We use our experimental results from diameter-modulated InN and GaN nanowires and extend our analysis to consider the potential and limitations for diameter modulation in other materials systems. We show that significant diameter modulations can be promoted for seed materials that enable substantial compositional and surface energy changes. Furthermore, we apply our model to provide insights into the morphology of the liquid/solid interface. Our approach can be used to understand and guide nanowire diameter modulation, as well as probe fundamental phenomena during nanowire growth.
    Modulation (music)
    Morphology
    Citations (30)
    We studied the cathodoluminescence spectra of InxGa1−xN, focusing on the spatial variation of the spectra. Strong inhomogeneity of cathodoluminescence spectra was observed on 22 nm thick InxGa1−xN layers, where the peak energy varied up to 400 meV. In a double quantum well with a well width of 10 Å, the luminescence peak in a broad area spectrum was at 3.18 eV, but on some areas the peak was at 3.07 eV, the size of the area being about 1 μm. The variation of the cathodoluminescence spectra clearly indicates the presence of in-plane potential fluctuation in some InxGa1−xN samples, although the cathodoluminescence spectra of most of our quantum wells optimized for devices were found to be uniform at least within the spatial resolution limit.
    Cathodoluminescence
    Citations (2)
    Abstract Using colour cathodoluminescence, spectral analysis and cathodoluminescence mapping in scanning electron microscopy, some peculiarities of cathodoluminescence from the indentation centre and the rosette on MgO (100) crystals were investigated over a wide temperature range 80–1000 K. The sensitivity of indentation-induced defects to thermal environments has been revealed. An attempt has been made to explain the spatial distribution of cathodoluminescence from around indentations in terms of dislocation internal friction in solids.
    Cathodoluminescence
    Indentation
    Citations (7)
    We demonstrate an efficient nanoscale electrical detector for propagating surface plasmons, tightly confined to nanoscale silver wires. Our technique is based on the near-field coupling between guided plasmons and a nanowire field-effect transistor. We demonstrate that this near-field circuit can efficiently detect the plasmon emission from a single quantum dot that is directly coupled to the plasmonic waveguide.
    Localized surface plasmon
    Citations (34)
    Abstract Surface plasmons are collective oscillations of free electrons localized at surfaces of structures made of metals. Since the surface plasmons induce fluctuations of electric charge at surfaces, they are accompanied by electromagnetic oscillations. Electromagnetic fields associated with surface plasmons are localized at surfaces of metallic structures and significantly enhanced compared with the excitation field. These two characteristics are ingredients for making good use of surface plasmons in plasmonics . Plasmonics is a rapidly growing and well-established research field, which covers various aspects of surface plasmons towards realization of a variety of surface-plasmon-based devices. In this paper, after summarizing the fundamental aspects of surface plasmons propagating on planar metallic surfaces and localized at metallic nanoparticles, recent progress in plasmonic waveguides, plasmonic light-emitting devices and plasmonic solar cells is reviewed.
    Localized surface plasmon
    Plasmonic solar cell
    Solid state analogy cathodoluminescence is a new kind of cathodoluminescence happening not in vacuum but in solid state materials like SiO 2 with the properties of semiconductor.In our experiments,we selected the solid state material SiO 2 as acceleration layer.The accelerated electrons with excite directly the luminescence materials in adjacent luminescent layer just like cathodoluminescence.The difference from cathodoluminescence lies in that the energetic electrons are accelerated not in vacuum but in solids.We prepared three devices of thin film electroluminescence with different structures.The phosphors layer is PPV and the accelerating layer is SiO 2 in these structures.Solid state analyogy cathodoluminescence was found in these devices and the luminous dynamics of it was studies also.We prepared the existence of solid state analogy cathodoluminescence in our experiments.And the efficiency of devices with this kind of new structure has been improved compared with the of formal experiments without solid state analyogy cathodoluminescence.This new phenomenon of luminescence makes it possible to set up a new type of flat display technology.
    Cathodoluminescence
    Citations (0)
    We present a systematic cathodoluminescence study yielding a clear correlation between the different growth conditions and the appearance and strength of the characteristic luminescence fingerprints of the individual point defects in AlN. In particular, the incorporation of oxygen and the formation of oxygen-related and probably silicon-related DX centers as well as the native Al and N vacancies are still a problem. The thermal activation of the deep defect centers is investigated by temperature dependent cathodoluminescence spectroscopy.
    Cathodoluminescence
    Deep-level transient spectroscopy
    Citations (33)
    Spatio-time-resolved cathodoluminescence measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor phase epitaxy. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed inversion domain boundaries. Local cathodoluminescence lifetimes (τCL) for the near-band-edge (NBE) emission are shown to be sensitively position dependent. A linear relation between the equivalent internal quantum efficiency (ηinteq) and τCL for the NBE emission was observed at room temperature under a weak excitation condition, and spatially resolved excitation led to the observation of the highest ηinteq of 20% with τCL of 3.3 ns.
    Cathodoluminescence
    Wide-bandgap semiconductor
    Citations (16)