Deep-ultraviolet n-ZnGa2O4/p-GaN heterojunction photodetector fabricated by pulsed laser deposition
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Abstract:
Zinc gallium oxide (ZnGa 2 O 4 ) has attracted considerable interest in deep-ultraviolet photodetectors, due to the ultrawide bandgap, high transmittance in the ultraviolet (UV) region, and excellent environmental stability. In this study, ZnGa 2 O 4 thin films were deposited on p-GaN epi-layers using pulsed laser deposition, resulting in improved crystalline quality. The ZnGa 2 O 4 film exhibited a bandgap of 4.93 eV, calculated through absorption spectra. A heterojunction photodetector (PD) was constructed, demonstrating a rectification effect, an on/off ratio of 12,697 at −5.87 V, a peak responsivity of 14.5 mA/W, and a peak detectivity of 1.14 × 10 12 Jones (262 nm, −6 V). The PD exhibited a fast response time (39 ms) and recovery time (30 ms) under 262 nm illumination. The band diagram based on the Anderson model elucidates the photoresponse and carrier transport mechanism. This work paves the way for advancing next-generation optoelectronics.Keywords:
Ultraviolet
Pulsed Laser Deposition
Deposition
Abstract Here, it is first reported that a self‐powered photodetector based on a MoS 2 /CH 3 NH 3 PbI 3 vertical type heterojunction, which has responsivity of 60 mAW −1 and response/recovery time of 2149/899 ms. Under bias, it exhibits a photoswitching ratio exceeding 1522, fast response/recovery time of 205/206 ms, and high photoresponsivity of 68.11 AW −1 . The optoelectronic performances of the photodetector are closely related to the type of the MoS 2 /CH 3 NH 3 PbI 3 heterojunction, which acts as a hole (electron) transport field and can effectively decrease the recombination of holes and electrons. Additionally, the MoS 2 /CH 3 NH 3 PbI 3 planar type heterojunction is also built to compare with the vertical type in optoelectronics behavior. Due to the existence of internal field, the properties of vertical type photodetector are better than those of the planar type which also presents good performance with on/off ratio up to 1476, photoresponsivity of 28 AW −1 , and response rate of 356/204 ms. These results pave a new way to form an ultrahigh performance MoS 2 /CH 3 NH 3 PbI 3 heterojunction, hold the promise for construction of a self‐powered photodetector, and develop promising atomically thin MoS 2 heterostructure device for photovoltaic and optoelectronic applications.
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An ultraviolet array photodetector is developed by the application of a LiNbO3-based slanted finger interdigital transducer (SFIT) and several ZnO optically active areas. This array photodetector can obtain ultraviolet light intensities within a single measurement. In this analysis, the acoustoelectric interaction between the photogenerated carriers in several active areas and a SFIT surface acoustic wave device is simulated. In the experiment, the photodetector with one to three optically active areas are fabricated. Ultraviolet light with a wavelength of 380 nm and an intensity of 65 μW cm−2 is detectable from the photodetector developed in this study. The minimum size of the optically active areas is 0.04 mm2 that can provide good spatial resolution. The ultraviolet array photodetector is capable of measuring a distributed light field.
Ultraviolet
Interdigital transducer
Ultraviolet light
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Photoconductivity
Ultraviolet
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Bulk aluminium material is chosen as targets to prepare pure Al film by the method of pulsed laser deposition(PLD).The thickness uniformity of Al film in coaxial and side-axial deposition modes is also studied comparatively.Besides,the effects of substrate temperature,laser power and repetition rate on deposition rate of Al film in side-axial deposition mode are investigated respectively.The results show that the thickness uniformity of the film gotten in side-axial deposition mode is better than that in coaxial deposition mode.The deposition rate of Al film decreases with the increase of the substrate temperature.However,the deposition rate of Al film increases with increasing laser power.Especially,there is a maximum deposition rate of Al film by varying the laser repetition rate.The above method and results can be used as a theoretical guidance for big area film deposition by PLD in application.
Pulsed Laser Deposition
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Coaxial
Ion plating
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Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature, oxygen pressure and target - substrate distance. In general during deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew with different orientations. We report on the experimental set-up, details for film deposition and the film properties determined by SEM, EDX and XRD.
Pulsed Laser Deposition
Deposition
Morphology
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Ultraviolet
Ultraviolet light
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Homojunction
Ultraviolet
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In this work, we fabricate a ZnO/NiO/Si heterojunction photodetector, which successfully realizes selective detection of UV or visible light in a single photodetector.
Non-blocking I/O
Ultraviolet
Visible spectrum
Ultraviolet light
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Pulsed laser deposition (PLD) is widely used to prepare various kinds of thin films. From many experimental results the film surface has been found to be strongly affected by so-called droplets, which are relatively large target material particles in solid or liquid state carried with the plume. In order to satisfy both purposes of high deposition rate and good quality by the PLD, we have investigated the plume reflection process from the viewpoint to avoid the big particles deposited on the substrate. In the present paper we investigate the influences of the system parameters on surface thin film quality and the deposition rate. Some optimization proposals are also included for this deposition technique.
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Pulsed Laser Deposition
Reflection
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