Ta3N5–LaTaON2 heterojunction with matched interfaces to accelerate charge separation for efficient photocatalytic water oxidation
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Abstract Integration of noble metals into semiconductor‐based nanoparticle gel structures facilitates the extraction of photoexcited charge carriers upon illumination. While charge carrier generation takes place in the semiconductor component, noble metals in contact to the semiconductor act as electron sinks. Thus, the nature of the interface between the components is of essential importance, as it dictates the characteristics of the interparticle contact. Here, the influence of the nanoscale building block design on the charge carrier dynamics in cryoaerogels consisting of CdSe/CdS nanorods and nanoplatelets as well as of gold or platinum is reported. It is shown that direct growth of noble metal domains onto the semiconductor prior to the gelation significantly facilitates charge carrier separation in their cryoaerogel structures compared to gels from the colloidal mixtures of semiconductor and noble metal nanoparticles, the latter ones having less defined metal/semiconductor boundaries and much more arbitrary component distributions. Although the structure of the different cryoaerogel systems is similar at the micro‐ and macroscale, nanoscale differences caused by the two synthetic routes drive essentially different behavior regarding the charge carrier dynamics efficiency. These effects are observed spectroelectrochemically via intensity‐modulated photocurrent spectroscopy emphasizing the importance of the semiconductor–metal connection in the hybrid structures.
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Noble metal
Nanorod
Photocurrent
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Carrier concentration denotes the number of charge carriers per unit volume. Charge carriers involve equations concerning electrical conductivity as well as thermal conductivity. In this paper, the carrier concentration is calculated for intrinsic, n-type, and p-type semiconductors. The purpose of calculating carrier concentration is to find out the number of holes and electrons of different semiconductors at different temperatures and doping concentrations. This helped to analyze the properties of semiconductors. By looking at the properties one can decide the right application for the semiconductor.
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Electron Mobility
Intrinsic semiconductor
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Degradation
Visible spectrum
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Redistribution
Settling
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Semiconductor heterojunctions offer unique electrical and optical properties not otherwise found in nature. Growth methods are now available to create new novel heterojunction structures with state-of-the-art physical properties for next generation electronics. This chapter covers the unique interface features of semiconductor heterojunctions in terms of their geometrical, chemical, and electronic structure. For a particular application, one chooses semiconductors or semiconductor alloys based on both their energy gaps and their good lattice match. The lattice mismatch between heterojunction constituents leads to strain and ultimately the formation of lattice dislocations. Semiconductor-semiconductor heterojunctions can exhibit a variety of chemical structures including interdiffusion, chemical reactions, and interlayer effects. The chapter reviews both experimental and theoretical work to understand the nature of heterojunction band offsets as well as atomic-scale methods to control them. One approach to describe band offsets involves the alignment of charge neutrality levels in the two semiconductors.
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Underlayer exposed ZnO:Al-TiO2 coupled films are prepared by different means.Surface morphology by SEM,microstructure by XRD,film thickness by surface profiler and photocatalysis are investigated.In order to explain the enhanced photocatalysis,reaction Ag++→Ag↓ is adopted to clarify the mechanism.It turns out that during the process of photocatalysis the exposed part of the underlayer releases e-and this suppresses recombination of light-induced charges,thus enhanced photocatalysis.
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The mechanism of semiconductor assisted radio- and photocatalysis is based on the principle that particulate semiconductors behave as miniature electrochemical cells driven by radiolytic or photoinduced charge separation. The efficiency of nanoparticulate wide band gap semiconductors is often determined by energy loss pathways such as charge recombination and charge trapping. It is important therefore to understand the complex interplay between structure and electronic properties and how they effect both the lifetime and chemical potential of charge carriers.
Charge carrier
Nanocrystalline material
Wide-bandgap semiconductor
Visible spectrum
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