Gas-sensing properties of In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- alloy films
В. И. НиколаевА. V. АlmaevBogdan O. KushnarevА. И. ПечниковS. I. StepanovA. V. ChikiryakaR. B. TimashovM. P. ScheglovP. N. ButenkoЕ. В. Черников
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The effect of the gaseous medium composition on the electrically conductive properties of In 2 O 3 -Ga 2 O 3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100-550 o C, the In 2 O 3 -Ga 2 O 3 films exhibit high sensitivity to H 2 , NH 3 and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In 2 O 3 -Ga 2 O 3 films to gases is proposed. Keywords: In 2 O 3 -Ga 2 O 3 , halide vapor-phase epitaxy, gas sensitivity.Keywords:
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Abstract Als neue Klasse von Ion‐Molekül‐Reaktionen wird mit Methoden der Ionen‐Cyclotron‐ Resonanzspektroskopie z.B. die Reaktion von Methanolat‐ oder CD3O′‐Ionen mit Äthylfluorid, 1,1 ,2‐Tetrafluor‐ oder l,1,l‐Trifluor‐äthan untersucht.
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Abstract Tri‐halide vapor phase epitaxy (THVPE) of GaN using GaCl 3 gas generated by the reaction between metallic Ga and Cl 2 gas at the source zone was investigated. From thermodynamic analysis, it was predicted that the driving force for GaN growth by THVPE would be larger than that by conventional mono halide vapor phase epitaxy (HVPE) using GaCl as a group III precursor. From the growth experiments, it was shown that the growth rate of GaN by THVPE was much higher than that by conventional HVPE under the same input partial pressure conditions. It was also revealed that GaN growth is possible at higher temperatures by THVPE. In photoluminescence (PL) and X‐ray diffraction (XRD) measurements, a GaN layer grown by THVPE at 1150 °C has optical properties and crystalline quality superior to that of a GaN layer grown by HVPE at 970 °C (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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The influence of ambient gas species on epitaxial lateral overgrowth using selective area growth is studied by metalorganic vapor phase epitaxy. When the stripe direction is along the 〈11-00〉 crystal axis, trapezoidal cross-sectional shape with smooth (0001) surface on the top is obtained in H2 ambient gas. On the other hand, in N2 ambient gas, regardless of the coalescence of lateral overgrown regions, a smooth surface is not obtained, it is undulated according to the stripe pattern, and there are voids between coalesced regions. In a sample grown in N2, analyses of the selected area diffraction and X-ray rocking curves show that the c-axis tilts about 13° toward the 〈112-0〉 direction on the coalesced region.
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The influence of ambient gas species on epitaxial lateral overgrowth using selective area growth is studied by metalorganic vapor phase epitaxy. When the stripe direction is along the 〈11-00〉 crystal axis, trapezoidal cross-sectional shape with smooth (0001) surface on the top is obtained in H2 ambient gas. On the other hand, in N2 ambient gas, regardless of the coalescence of lateral overgrown regions, a smooth surface is not obtained, it is undulated according to the stripe pattern, and there are voids between coalesced regions. In a sample grown in N2, analyses of the selected area diffraction and X-ray rocking curves show that the c-axis tilts about 13° toward the 〈112-0〉 direction on the coalesced region.
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The effects of reactant-gas velocity on the growth of InN on GaN/sapphire substrate by organometallic vapor-phase epitaxy (OMVPE) were studied. With a high-speed reactant gas, the thickness of the stagnant layer is reduced so that the reactant species can reach the surface effectively. A layerlike growth of InN was achieved, resulting in a marked improvement of the film quality. In addition, significant enhancement of the growth rate up to 2 µm/h was obtained. The full-width at half maximum (FWHM) of the X-ray rocking curve (XRC) decreased with increasing gas velocity. A 476 arcsec width of XRC was reproducibly achieved, indicating high-quality InN epitaxial films. A Hall mobility of 250 cm2/V-s with a carrier concentration of 1×1019 cm-3 at room temperature was obtained on a 0.5-µm-thick InN film.
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A thick and fully relaxed In0.05Ga0.95N layer was epitaxially grown on a GaN substrate after growing partially relaxed intermediate InGaN layers using tri-halide vapor phase epitaxy. In order to control the relaxation ratio of intermediate InGaN layers, a double intermediate structure with different growth rates (low growth rate and high growth rate modes) was adopted. By changing the first intermediate InGaN layer thickness, the relaxation ratio could be varied in the ranges between 25% and 59%. According to X-ray diffraction reciprocal space mapping measurements, a fully relaxed In0.05Ga0.95N layer was successfully grown on a partially relaxed intermediate In0.10Ga0.90N layer with the relaxation ratio of 32%. Thus, a mirror-like, fully relaxed and thick In0.05Ga0.95N layer could be grown with lattice matched to the intermediate InGaN layers by controlling the relaxation ratio.
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