Piezoresistive Fibers with Large Working Factors for Strain Sensing Applications
Mugaanire Tendo InnocentZiling ZhangRan CaoHongmei DaiYuxuan ZhangYaqi GengZhihao ZhangGuosheng JiaMian ZhaiZexu HuConor S. BolandHengxue XiangMeifang Zhu
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Piezoresistive fibers with large working factors remain of great interest for strain sensing applications involving large strains, yet difficult to achieve. Here, we produced strain-sensitive fibers with large working factors by dip-coating nanocomposite piezoresistive inks on surface-modified polyether block amide (PEBA) fibers. Surface modification of neat PEBA fibers was carried out with polydopamine (PDA) while nanocomposite conductive inks consisted of styrene-ethylene-butylene-styrene (SEBS) elastomer and carbon black (CB). As such, the deposition of piezoresistive coatings was enabled through nonconventional hydrogen-bonding interactions. The resultant fibers demonstrated well-defined piezoresistive linear relationships, which increased with CB filler loading in SEBS. In addition, gauge factors decreased with increasing CB mass fractions from ∼15 to ∼7. Furthermore, we used the fatigue theory to predict the endurance limit (Ce) of our fibers toward resistance signal stability. Such a piezoresistive performance allowed us to explore the application of our fibers as strain sensors for monitoring the movement of finger joints.Keywords:
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This paper presents the custom-made graphite-based piezoresistive strain sensor with gecko foot-inspired macroscopic features realized using a Velcro tape on Ecoflex substrate. The Velcro-based design provides an inexpensive and easy approach for the development of soft sensors with appreciable improvement in the performance even at low strain values. The sensor demonstrated excellent response (sensitivity of ∼16 500%, gauge factor of ∼3800) for 24% linear strain. The fabricated device showed a high gauge factor (>100) even for very low strain values. The sensor has been extensively characterized with a view to potentially use in soft robotics applications where high performance is needed at lower strain values. It is observed that the piezoresistive behavior of strain sensors is governed by several factors such as the supporting elastic medium, architecture of the strain sensor, material properties, strain rate and deformation sequence, and direction.
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We present the first SU-8 based piezoresistive mechanical sensor. Conventionally, silicon has been used as a piezoresistive material due to its high gauge factor and thereby high sensitivity to strain changes in a sensor. By using the fact that SU-8 is much softer than silicon and that a gold resistor is easily incorporated in SU-8, we have proven that a SU-8 based cantilever sensor is almost as sensitive to stress changes as the silicon piezoresistive cantilever. We demonstrate the chip fabrication, and characterization with respect to sensitivity, noise and device failure.
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Abstract Enhancing the piezoresistive effect is crucial for improving the sensitivity of mechanical sensors. Herein, we report that the piezoresistive effect in a semiconductor heterojunction can be enormously enhanced via optoelectronic coupling. A lateral photovoltage, which is generated in the top material layer of a heterojunction under non-uniform illumination, can be coupled with an optimally tuned electric current to modulate the magnitude of the piezoresistive effect. We demonstrate a tuneable giant piezoresistive effect in a cubic silicon carbide/silicon heterojunction, resulting in an extraordinarily high gauge factor of approximately 58,000, which is the highest gauge factor reported for semiconductor-based mechanical sensors to date. This gauge factor is approximately 30,000 times greater than that of commercial metal strain gauges and more than 2,000 times greater than that of cubic silicon carbide. The phenomenon discovered can pave the way for the development of ultra-sensitive sensor technology.
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We report on a strong piezoresistive effect in metal–semiconductor–metal structures fabricated on p-type GaN. The maximum measured gauge factor was 260, which is nearly two times larger than for piezoresistive silicon transducers. We attribute this large sensitivity to applied strain to the combination of two mechanisms: (i) a high piezoresistance of bulk p-GaN and (ii) a strong piezoresistive effect in a Schottky contact on p-GaN. The obtained results demonstrate that GaN-based structures can be suitable for stress/pressure sensor applications.
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Experimental investigations of piezoresistive effects in thick-film resistors were performed by measuring longitudinal and transverse gauge factors as a function of applied strain on two different substrates' thickness. The relative change in resistance of the thick-film resistors studied was linear, symmetric, reproducible, and free of measurable hysteresis for strain between 0 and +or-1000 microstrain. A gauge factor of approximately twice that previously reported was obtained. The suitability of this technology for strain-sensing applications is discussed.< >
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Graphene shows promise on strain sensor applications, but the piezoresistive sensitivity of perfect graphene is low due to its weak electrical conductivity response upon structural deformation. In this paper, we used nanographene films for ultra-sensitive strain sensors. The piezoresistive sensitivity of nanographene films with different thicknesses and conductivities was systematically investigated and a nearly inverse proportional correlation was found. A gauge factor over 300, the highest so far for graphene-based strain sensors, was achieved. A charge tunneling model was used to explain the piezoresistive characteristics of nanographene films, which indicates our results provide a different rout toward ultra-sensitive strain sensors.
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Temperature Dependence of Gauge Factor of Printed Piezoresistive Layers Embedded in Organic Coatings
The paper reports on temperature behavior of strain sensitivity of recently introduced screen printing technology facilitating the realization of silver and carbon black piezoresistors embedded in organic coatings. Piezoresistive layers were prepared by screen printing directly on the top of the organic coating. Since no glue or carrying substrates are between the sensitive element and the device under test, the coupling factor is high and the strain is efficiently transferred to the sensing element. The strain induced changes in resistance (piezoresistive effect) are generally lower compared to the changes induced by temperature. The temperature dependence of the sensitivity to strain was investigated utilizing both single element piezoresistors and piezoresistors connected to a Wheatstone bridge. The study analyzes strain-gauges under longitudinal tensile and compressive strain and temperatures up to 80 °C. Screen printed strain gauges can provide reliable and robust strain measurements for coated metallic substrates, the sensor performance is comparable to the conventional solution with glued sensors.
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The aim of this scientific work is to present different piezoresistive materials suitable to be integrated into micromechanical force sensors. As material for the mechanical structure of the sensors SU-8 has been chosen because it features favorable characteristics, such as flexible and simple fabrication of micro components through the use of standard UV lithography for forming three dimensional geometries such as cantilevers and membranes. In addition, on the basis of a significantly lower Young’s modulus compared to silicon, great opportunities to improve the force sensitivity of such sensors are offered by SU-8.However, SU-8 photoresist does not have piezoresistive properties, and therefore it has to be combined with an additional, beneficial piezoresistive material. A well-controlled and frequently used material for piezoresistive elements is doped silicon. This paper provides an overview of characteristics such as gauge factor and temperature coefficient of resistance (TCR) for a variety of commonly used piezoresistive materials, namely metals, silicon, conductive composite materials and diamond-like carbon. As a characteristic factor for the estimated sensitivity of the force sensor, the ratio of the gauge factor k to the Young´s modulus E of the structural material is presented for the different material combinations. A classification of conventional silicon based tactile force sensors is made to build a basis for comparison. Furthermore the suitability of different piezoresistive materials for the integration into an SU 8-based sensor is investigated.
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