Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O
Hyun-Min AhnSeo-Hyun MoonYoung-Ha KwonNak‐Jin SeongKyu-Jeong ChoiChi-Sun HwangJong‐Heon YangYong‐Hae KimSung‐Min Yoon
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Trench-structured In-Ga-Zn-O vertical thin-film transistors (T-VTFT) was fabricated with a channel length of 400 nm. T-VTFTs showed channel width-dependent field-effect mobility owing to the back-channel scattering, and the mobility of 24.1 cm2 The authors fabricated an organic nanochannel field-effect transistor (FET) that is self-wired with highly conductive organic conductors. The advantages of the transistor are a short channel (approximately 400nm in length) and spontaneous formation of an active layer of the FET. Further, in principle, the carrier-injection barrier is absent at the interface of the organic metal and organic semiconductor. Thus, the transistor is highly conductive despite the narrow cross section of the channel. The FET characteristics of the nanochannel transistor exhibit the n-channel enhancement mode behavior.
Organic semiconductor
Organic field-effect transistor
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For the present work single-walled carbon nanotube (SWNT) field-effect transistors and field-effect transistors based on poly(3-hexylthiophene) were fabricated and used as protein sensors in aqueous environment. The stability of both transistor types in biological buffers was tested. Additionally the interactions of various proteins with ligands, were analyzed using SWNT transistors. Using biofunctionalized SWNT transistors the dissociation constants of a protein was probed and it was possible to distinguish between two different other proteins by their pH-dependent sensor response.
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In the present work, computational simulations was made using ANSYS CFX to predict the improvements in film cooling performance with multi trench. Multi-trench configuration consists of two trenches together, one wider trench and the other is narrow trench that extruded from the wider one. Several blowing ratios in the range (0.5:5) were investigated. By using the multi trench configuration, the coolant jet impacted the trench wall two times allowing increasing the spreading of coolant laterally in the trench, reducing jet velocity and jet completely covered on the surface. The results indicate that this configuration increased adiabatic effectiveness as blowing ratio increased. No observed film blow-off at all blowing ratios. The adiabatic film effectiveness of multi trench case outperformed the narrow trench case, laidback fan-shaped hole, fan-shaped hole and cylinder hole at different blowing ratios. An additional benefit is the low flow rate will provide the same cooling effect by using multi trench configuration.
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A general theory for forced barotropic long trench waves in the presence of linear bottom friction is presented. Two specific forcing mechanisms are considered: (i) transverse fluctuations in a western boundary current as it flows across a trench, and (ii) a traveling wind system that moves parallel to the trench. The mechanisms (i) and (ii) are applied to the Japan-Kuril trench and Aleutian trench, respectively. In the case of the Japan-Kuril trench it is found that 3-month period fluctuations in the Kuroshio are able to generate currents along the trench of 0 (10 cm s−1) and coastal sea level variations of O (7 cm). In the case of the Aleutian trench, traveling wind systems in the northeast Pacific may produce a near resonant response. Such a response consists of velocity fluctuations of 0 (10 cm s−1) along the trench and of 0 (4 cm s−1) across the trench, the coastal sea level fluctuations can be up to 12 cm. While these estimates should be regarded as tentative because of the uncertainty in the value of the bottom friction coefficient, they nevertheless suggest that trench wave motions could produce significant long-time scale velocity and sea level fluctuations in the North Pacific trenches.
Barotropic fluid
Forcing (mathematics)
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Room temperature magnetotransport experiments were carried out on field-effect transistors in magnetic fields up to 10 T. It is shown that measurements of the transistor magnetoresistance and its first derivative with respect to the gate voltage allow the derivation of the electron mobility in the gated part of the transistor channel, while the access/contact resistances and the transistor gate length need not be known. We demonstrate the potential of this method using GaN and Si field-effect transistors and discuss its importance for mobility measurements in transistors with nanometer gate length.
Electron Mobility
Static induction transistor
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Floating gate field-effect transistors (FETs) for the detection of extracellular signals from electrogenic cells were fabricated in a complementary metal oxide semiconductor process. Additional passivation layers protected the transistor gates from the electrolyte solution. To compare the signals from n- and p-FETs, two electronically separated, but locally adjacent transistors were combined to one measuring unit. The paired sensing area of this unit had the dimension of a single cell. Simultaneous recordings with n- and p-channel floating gate FETs from a single cell exhibited comparable amplitudes and identical time courses. The experiments indicate that both types of FETs express similar sensitivities.
Passivation
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This paper discusses a model for the trench transistor used in the trench transistor cell (TTC), which is employed in Texas Instruments' 4-Mbit DRAM. PISCES-II simulations are used to study the unique characteristics that result from the nonuniform doping along the channel and the nonuniform gate oxides in these transistors. The simulations are correlated with experimental data and an analytical description is proposed to qualitatively explain the observed behavior.
Dram
Megabit
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Film cooling effectiveness can be improved significantly by embedding a round hole in trenches or craters. In this study, film cooling performances of a transverse trench, W-shaped trench and elliptic trench were compared and analyzed in detail. The CFD models for trench film cooling were established and validated via the experimental results. Inside the transverse trench, a pair of recirculating vortices is formed, which promotes the coolant spreading in a lateral direction. The decrease of trench width and increase of trench depth both improve the film cooling effectiveness of the transverse trench. For the W-shaped trench, the guide effect of the corner angle further improves the lateral spreading capability of coolant and generates higher cooling effectiveness than a transverse trench with the same depth and width. The flow characteristics of the elliptic trench are similar to that of the round hole, and the kidney vortex pair takes a dominant role in the flow fields downstream of the coolant exit. Accordingly, the elliptic trench generates the worst cooling performance in these shaped trenches. The increase of trench depth and decrease of trench width both result in an increase of the discharge coefficient for trench film cooling. For the W-shaped trench, the increase of the corner angle causes a decrease of the discharge coefficient. For the elliptic trench, the discharge coefficient increases with the decrease of the elliptic aspect ratio (major axis/minor axis).
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Experiments on a salt-water flow running up over a trench are carried out on the basis of a flow-visualization technique to consider the local hydraulic characteristics of flows around the trench, which is necessary for maintaining or reproducing the function of trench as a habitat. The flow regime inside and outside the trench significantly depends on the aspect ratio of a opening length to a step height of trench. In case that the opening length of trench is shorter than the reattachment length, large eddy motions induced periodically inside the trench by the vortex shedding from the step. The eddies have direct effects upon momentum exchange through the trench-mouth, and reduce the magnitude of velocity inside the trench.
Eddy
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In this work, a method was investigated to extract trench sidewall and trench bottom capacitances of a SiC trench metal-oxide-semiconductor (MOS) structure. Five groups of 4H-SiC trench MOS capacitors were designed and fabricated, with various trench bottom widths and trench mesa widths. High-frequency capacitance-voltage (HFCV) measurements at 100 kHz were performed on these trench MOS structures. The relationships between trench MOS capacitances and the widths of trench bottom as well as trench mesa were studied. As expected, under the same bias voltage, the measured trench MOS capacitances were proportional to the trench bottom widths and trench mesa widths. Based on this, the contributions of capacitances from the bottom, mesa, and sidewall of trench in trench MOS structure were studied systematically. The oxide thicknesses at different locations in trench were extracted. The C-V characteristics of the MOS capacitors from trench sidewall and trench bottom could also be deduced, from which the flat-band voltage and the charges in oxide of these two MOS capacitors could be subsequently calculated and analyzed. This method provides a convenient and precise technology to monitor process control in SiC trench MOSFETs manufacturing.
Shallow trench isolation
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