Enhanced high-temperature energy storage properties of polymer composites by interlayered metal nanodots
Shuai LiJiufeng DongYujuan NiuLi LiFeng WangRenchao HuJin ChengLiang SunZizhao PanXinwei XuHong Wang
27
Citation
53
Reference
10
Related Paper
Citation Trend
Abstract:
The PC-Au nanodots-PC heterojunction film with merely 0.0035 vol% of Au nanodots exhibited a superior U e (6.25 J cm −3 ) and η (86.6%) at 150 °C, far surpassing those of the reported advanced polymers and nanocomposite dielectrics.Keywords:
Nanodot
High energy
Nanodot
Non-blocking I/O
Cite
Citations (6)
In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3×1011 cm−2, respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots.
Nanodot
Germanium compounds
Cite
Citations (46)
This report describes the memory effect of an Al/sub 0.5/Ga/sub 0.5/As/GaAs field-effect (FE) structure which contains vertically aligned InAs nanodots in the barrier layer. The FE structure is grown by molecular beam epitaxy using Stranski-Krastanow islands as the nanodots. Charge storage effect of the nanodots is analyzed by a capacitance-voltage measurement and resulted in a hysteresis loop due to the stable electron trapping at nanodot potentials. The amount of charge for the long-term memory retention at 300 K is estimated to be /spl sim/14 nC/cm/sup 2/, which is promising for memory device applications of the FE structure.
Nanodot
Hysteresis
Cite
Citations (0)
Simultaneous achievement of low thermal conductivity κ and high electrical conductivity σ is a promising route for realizing Si-based thermoelectric materials. Although several attempts have been made, this requirement has still been bottlenecked by their correlated nature. In order to realize low κ and high σ simultaneously, we have proposed a nanoarchitecture that is Si films including epitaxial Ge nanodots. This nanoarchitecture was fabricated based on molecular beam epitaxy, where Ge nanodots and Si layer were stacked alternately on Si substrates using unique ultrathin SiO2 film technique. In this study, we investigated the impact of Ge nanodot incorporation and doping on the κ and σ. The κ was significantly reduced by Ge nanodot incorporation whereas the σ exhibited high value coming from Si property. This demonstrated the accomplishment of the nanostructure design for the independent control of carrier and phonon transport using the ultrasmall epitaxial Ge nanodots.
Nanodot
Cite
Citations (0)
This chapter contains sections titled: Introduction Ceramic/Metal Nanocomposites Nanocomposites by Mechanical Alloying Nanocomposites from Sol–Gel Synthesis Nanocomposites by Thermal Spray Synthesis Metal Matrix Nanocomposites Bulk Ceramic Nanocomposites for Desired Mechanical Properties Thin-Film Nanocomposites: Multilayer and Granular Films Nanocomposites for Hard Coatings Carbon Nanotube-Based Nanocomposites Functional Low-Dimensional Nanocomposites Encapsulated Composite Nanosystems Applications of Nanocomposite Wires Applications of Nanocomposite Particles Inorganic Nanocomposites for Optical Applications Inorganic Nanocomposites for Electrical Applications Nanoporous Structures and Membranes: Other Nanocomposites Nanocomposites for Magnetic Applications Particle-Dispersed Magnetic Nanocomposites Magnetic Multilayer Nanocomposites Nanocomposite Structures having Miscellaneous Properties Concluding Remarks on Metal/Ceramic Nanocomposites
Nanoporous
Cite
Citations (38)
Three-dimensional (3D) self-ordered Ge nanodots in cyclic epitaxial growth of Ge/SiGe superlattice on Si 0.4 Ge 0.6 virtual substrate (VS) were fabricated by reduced pressure chemical vapor deposition. By the Ge/SiGe superlattice deposition, dot-on-dot alignment and <100> alignment were obtained toward the vertical and lateral direction, respectively. Facets and growth mechanism of Ge nanodots and key factors of alignment were studied. Two types of Ge nanodots were observed, diamond-like nanodots composed of {105} and dome-like nanodots composed of {113} and {159} facets. The Ge nanodots tend to grow directly above the nanodots of the previous period as these regions show a relative higher tensile strain induced by the buried nanodots. Thus, this dot-on-dot alignment is sensitive to the SiGe spacer thickness, and it degrades when the SiGe spacer is over 82 nm. The Ge content of the SiGe spacer ranging 45-52% affects the lateral alignment and the size uniformity of Ge nanodots because of the strain balance between the superlattice and the VS. When the strain is balanced, 3D aligned Ge nanodots can be achieved.
Nanodot
Deposition
Cite
Citations (3)
We employ surface topographies and phase images to investigate InN nanodots. The samples are annealed at 450, 500 and 550 □. The results reveal that the statistical distributions of number density and mean size depend on annealing ambient. The behaviours of thermal annealing between InN films and InN nanodots are distinguishable: the alloying process of InN and GaN not only occurs in InN platelets, but also in InN nanodots once the samples are annealed at the growth temperature of InN nanodots, while the main change in InN films is the decomposition of InN into In droplets and N 2 .
Nanodot
Cite
Citations (0)
Self-assembled Ge nanodots were grown on pre-patterned Si substrates by chemical vapor deposition.The pre-patterned Si substrates were fabricated by the electrochemical lithography(ECL) method.The surface morphology obtained by atomic force microscopy shows that the size and distribution of the Ge nanodots grown at 500 ℃ are strongly relevant with the pre-patterned Si nanodots on substrates.The average size of the Ge nanodots is about 35 nm and the dot density is about 5×1010 cm-2.The impact of the Si nanodots on the growth of Ge nanodots becomes insignificant at lower and higher deposition temperature.
Nanodot
Deposition
Cite
Citations (0)
Abstract Self-ordered multilayered Ge nanodots with SiGe spacers on a Si 0.4 Ge 0.6 virtual substrate are fabricated using reduced-pressure chemical vapor deposition, and the mechanism of vertical ordering is investigated. The process conditions of Ge and SiGe layer deposition are H 2 -GeH 4 at 550 °C and H 2 -SiH 4 -GeH 4 at 500 °C–550 °C, respectively. By depositing the SiGe at 550 °C or increasing Ge content, the SiGe surface becomes smooth, resulting in vertically aligned Ge nanodots to reduce strain energy. Ge nanodots prefer to grow on the nanodot where the SiGe is relatively tensile strained due to the buried Ge nanodot underneath. By depositing at 500 °C and lowering Ge content, checkerboard-like surface forms, and the following Ge nanodots grow at staggered positions to reduce surface energy. The Ge nanodots are laterally aligned along the elastically soft 〈100〉 direction without pre-structuring resulting from the strain distribution.
Nanodot
Deposition
Germanium compounds
Cite
Citations (0)
Three-dimensional (3D) self-ordered Ge nanodots in cyclic epitaxial growth of Ge/SiGe superlattice on Si 0.4 Ge 0.6 virtual substrate (VS) were fabricated by reduced pressure chemical vapor deposition. The Ge nanodots were formed by Stranski-Krastanov mechanism. By the Ge/SiGe superlattice deposition, dot-on-dot alignment and 〈100〉 alignment were obtained toward the vertical and lateral direction, respectively. Facets and growth mechanism of Ge nanodots and key factors of alignment were studied. Two types of Ge nanodots were observed, diamond-like nanodots composed of {105} and dome-like nanodots composed of {113} and {519} or {15 3 23} facets. The Ge nanodots tend to grow directly above the nanodots of the previous period as these regions show a relatively higher tensile strain induced by the buried nanodots. Thus, this dot-on-dot alignment is sensitive to the SiGe spacer thickness, and it degrades when the SiGe spacer becomes thicker. The Ge content of the SiGe spacer ranging from 45 to 52% affects the lateral alignment and the size uniformity of Ge nanodots because of the strain balance between the superlattice and the VS. By maintaining the strain balance, ordering of the 3D aligned Ge nanodots can be improved.
Nanodot
Cite
Citations (2)