The flexible sensors based on organic field-effect transistors: materials, mechanisms, and applications
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Organic field-effect transistor (OFET) is an ideal sensor platform, which has rich sensing mechanisms for perceiving analytes. Benefiting from the advantages of organic semiconductors such as lightweight, mechanical flexibility, solution processability and tunable molecular structure, various flexible sensors based on OFETs have been widely applied in the fields of wearable electronics, e-skin, biological detection and environmental protection. This review summarizes the research progress of flexible OFET-based sensors in recent years. From the perspective of materials, mechanisms and applications, we introduce the design principle of organic semiconductor sensing materials, the working mechanisms of OFET-based sensors and their applications in the fields of chemistry, biology and physics. In the end, we conclude the current situation and existing problems of OFET-based sensors and look ahead to the future development direction of flexible OFET-based sensors.
<p class="BodyText1"><span lang="EN-IN">We report that photoresponse of </span><span lang="EN-US">a single metal-organic charge transfer complex Cu:TCNQ nanowire (NW)</span><span lang="EN-IN"> can be enhanced simultaneously by illumination as well as applying a gate bias in an Electric Double Layer Field Effect Transistor (EDL-FET) configuration fabricated on </span><span lang="EN-US">Cu:TCNQ </span><span lang="EN-IN">as a channel.</span><span lang="EN-IN">It is observed that applying a bias using an EDL gate to a n-channel Cu:TCNQ single NW FET, one can enhance the photoresponse of the Cu:TCNQ substantially over that which arise from the photoconductive response alone. </span><span lang="EN-US">Electron-hole pairs that generate in the NW under illuminated of wavelength 400nm gives rise photo current. Also, electric double layer induce negative charges in the NW channel which effectively increases the carrier concentration, contributing to better response in conduction. </span><span lang="EN-IN">The effect reported here has a generic nature that gives rise to a class of gated photodetectors of different photoresponsive materials.</span></p>
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We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of ∼107 at the gate voltage Vg=−40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as polarized UV detectors with a high sensitivity.
Photocurrent
Photosensitivity
Photoconductivity
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A bottom contact/top gate ambipolar “p-i-n” layered light emitting field effect transistor with the active medium inserted between two doped transport layers, is reported. The doping profile results crucial to the capability of emitting light, as well as to the electrical characteristics of the device. In this sense, high output current at relative low applied gate/drain voltage and light emission along the whole large area transistor channel are observed, putting the basis to full integration of organic light emitting field effect transistors in planar complex devices.
Ambipolar diffusion
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High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. One open issue is how the radiation couples to the sub-wavelength transistor channel. Here, we studied the coupling of radiation to an AlGaN/GaN transistor with cut-off frequency of 30 GHz. Local irradiation with a Free Electron Laser source at 0.15 THz allowed us to selectively couple the signal to the channel through one transistor terminal at a time. Far-field experiments at 0.15–0.94 THz were also performed in order to study the nonlinear properties of the transistor channel.
Cutoff frequency
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An ultrahigh photocurrent (PC) signal which was about thousand times higher compared to the corresponding dark current was achieved in a two-dimensional (2D) multi-layer MoS 2 field effect transistor (FET), owing to a gate-controlled MoS 2 /Ti/Au Schottky barrier (SB) modulation. The SBs can be enlarged for suppressing the electron drift along the channel in dark environment, and be reduced for the collection of photo-excited charge carriers in illuminating environment, providing the great potential for 2D electronic and optoelectronic applications.
Photocurrent
Modulation (music)
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This paper describes metal-oxide-semiconductor junctionless field effect transistors working as detectors of THz radiation. The exceptionally high signal to noise ratio has been achieved. These devices may operate as two terminal detectors without any gate bias.
SIGNAL (programming language)
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We have fabricated a vertical p-channel metal–oxide–semiconductor field-effect transistor called high-mobility heterojunction transistor (HMHJT). Compared with a Si control device, reduced short channel effects, reduced floating body effect, and high drive current have been achieved with this device structure. A SiGe/Si heterojunction barrier at the source/bulk junction suppresses drain induced barrier lowering and bulk punchthrough, which are significant problems for sub-100 nm devices. A SiGe source also helps to reduce the charge built-up in the floating body. The higher mobility in a strained SiGe channel and the absence of a hetero-barrier between the source and channel result in higher drive current. The fabricated HMHJT has a 60% higher drive current at VDS=VGS−VT=−1.6 V, and a 70× lower off-state leakage current at VDS=−1.6 V and VGS=0.0 V, compared with the Si control device.
Leakage (economics)
Electron Mobility
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Current situation of COVID-19 demands a rapid, reliable, cost-effective, facile detection strategy to break the transmission chain and biosensor has emerged as a feasible solution for this purpose. Introduction of nanomaterials has undoubtedly improved the performance of biosensor and the addition of graphene enhanced the sensing ability to a peerless level. Amongst different graphene-based biosensing schemes, graphene field-effect transistor marked its unique presence owing to its ability of ultrasensitive and low-noise detection thereby facilitating instantaneous measurements even in the presence of small amounts of analytes. Recently, graphene field-effect transistor type biosensor is even successfully employed in rapid detection of SARS-CoV-2 and this triggers the interest of the scientific community in reviewing the current developments in graphene field-effect transistor. Subsequently, in this article, the recent progress in graphene field-effect transistor type biosensors for the detection of the virus is reviewed and challenges along with their strengths are discussed.
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Monolithic integration of a GaAlAs laser with a GaAs Schottky-gate field effect transistor is demonstrated. A GaAs field effect transistor with a 3-μm gate length is formed on a double-heterostructure laser crystal which is protected by a high-resistivity isolation layer. Laser light intensity is modulated to realize rise and fall times of less than 0.4 ns by modulating the field effect transistor gate voltage.
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Бұл зерттеужұмысындaКaно моделітурaлы жәнеоғaн қaтыстытолықмәліметберілгенжәнеуниверситетстуденттерінебaғыттaлғaн қолдaнбaлы (кейстік)зерттеужүргізілген.АхметЯссaуи университетініңстуденттеріүшін Кaно моделіқолдaнылғaн, олaрдың жоғaры білімберусaпaсынa қоятынмaңыздытaлaптaры, яғнисaпaлық қaжеттіліктері,олaрдың мaңыздылығытурaлы жәнесaпaлық қaжеттіліктерінеқaтыстыөз университетінқaлaй бaғaлaйтындығытурaлы сұрaқтaр қойылғaн. Осы зерттеудіңмaқсaты АхметЯсaуи университетіндетуризмменеджментіжәнеқaржы бaкaлaвриaт бaғдaрлaмaлaрыныңсaпaсынa қaтыстыстуденттердіңқaжеттіліктерінaнықтaу, студенттердіңқaнaғaттaну, қaнaғaттaнбaу дәрежелерінбелгілеу,білімберусaпaсын aнықтaу мен жетілдіружолдaрын тaлдaу болыптaбылaды. Осы мaқсaтқaжетуүшін, ең aлдыменКaно сaуaлнaмaсы түзіліп,116 студенткеқолдaнылдыжәнебілімберугежәнеоның сaпaсынa қaтыстыстуденттердіңтaлaптaры мен қaжеттіліктерітоптықжұмыстaрaрқылыaнықтaлды. Екіншіден,бұл aнықтaлғaн тaлaптaр мен қaжеттіліктерКaно бaғaлaу кестесіменжіктелді.Осылaйшa, сaпa тaлaптaры төрт сaнaтқa бөлінді:болуытиіс, бір өлшемді,тaртымдыжәнебейтaрaп.Соңындa,қaнaғaттaну мен қaнaғaттaнбaудың мәндеріесептелдіжәнестуденттердіңқaнaғaттaну мен қaнaғaттaнбaу деңгейлерінжоғaрылaту мен төмендетудеосытaлaптaр мен қaжеттіліктердіңрөліaйқын aнықтaлды.Түйінсөздер:сaпa, сaпaлық қaжеттіліктер,білімберусaпaсы, Кaно моделі.
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