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We have studied the deposition of BaTiO 3 (BTO) thin films on various substrates. Three representative substrates were selected from different types of material systems: (i) SrTiO 3 single crystals as a typical oxide, (ii) Si wafers as a semiconductor, and (iii) Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.
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Alumina ceramics were joined at high temperatures using powdered glasses or gels as adhesives capable of crystallization. The fracture toughness of the joints was improved by subsequent heat treatment, leading to precipitation of crystalline phases. Measured K{sub IC} values increased from values typical of glasses to between 1.1 and 2.3 MPa{center dot}m{sup 1/2}. The increases were limited by only partially controlled interfacial reactions with the alumina and by residual porosity in the joints.
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Large amounts of the waste SiC sludge containing small amounts of Si and organic lubricant were produced during the wire cutting process of the single silicon crystal ingots. The waste SiC sludge was purified by the washing process and the purified SiC powders were used to fabricate continuously porous $SiC-Si_3N_4$ composites using a fibrous monolithic process, in which carbon, $6wt\%\;Y_2O_3-2\;wt\%\;A1_2O_3$ and ethylene vinyl acetate were added as a pore-forming agent, sintering additives, and binder, respectively. In the burning-out process, carbon was fully removed and continuously porous $SiC-Si_3N_4$ composites were successfully fabricated. The green bodies containing SiC, Si particles and sintering additives were nitrided at $1410^{\circ}C$ in a flowing $N_2+10\%\;H_2$ gas mixture. Continuously porous composites were combined with SiC, ${\alpha}Si_3N_4,\;\beta-Si_3N_4$ and a few $\%$ of Fe phases. The pore size of the 2nd and the 3rd passed $SiC-Si_3N_4$ composites was $260\;{\mu}m$ and $35\;{\mu}m$ in diameter, respectively.
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