Breaking the purity-stability dilemma in pure Cu with grain boundary relaxation
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Thermal Stability
Ionized impurity scattering
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Ionic radius
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The grain boundary cracking of the cast steel Ni9 seems to be mainly related tothe segregation of contaminantes H, S and P along boundaries. An addition of rare earth mayeliminate the segregation of these contaminantes along grain boundaries and improve the bind-ing force among boundaries, so as to reduce remarkably the grain boundary cracking.
Grain boundary strengthening
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Effects of certain impurities, which exit in growth solution of KDP crystal, on optical qualities of KDP crystal were investigated. The results showed that the effects of different kinds of impurities are not the same. The reason can be ascribed to the chemical structure and chemical bonds between the impurities and surface atoms of KDP crystal are not same.Those impurities have similar structure and easy to form H bonds with [H_2PO_4]~-,such as pyrophosphate and sulfate affect pyramidal sector of KDP crystal easily while the other impurities, such as Cl~- have no evident effect on the growth and properties of KDP crystals.
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Triglycine sulfate
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An improvement in efficiencies of polycrystalline CdTe can possibly be achieved by understanding the role of grain boundaries. Therefore, we systematically studied the atomic and electronic structures of various high angle grain boundaries including asymmetric tilt and twist grain boundaries using empirical potentials and density functional theory (DFT). The density of states analysis revealed that most grain boundaries lead to the formation of midgap states, which can drastically reduce the photovoltaic efficiency. The planar-averaged electrostatic potential analysis indicated attraction for holes around the grain boundary region.
Cadmium telluride photovoltaics
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The incorporation of impurities into single crystal layers of Ge grown by the disproportionation reaction 2GeI 2 \rightleftarrowsGe+GeI 4 , is studied thermodynamically. Impurity iodides formed in the source region are carried over substrate wafers where impurity atoms are liberated mainly through the reduction by Ge or GeI 2 . The amount of impurity incorporated depends largely upon the yields of reactions involved in the doping process, and the analysis leads to the conclusion that Sb, P and As are favorable as donor impurities while Ga, In and BI 3 as acceptor impurities.
Acceptor
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The impurity content in high-purity graphite was extremely low,so it is very difficult to detect the existence of impurities,and the impurity content also can not be accurately detected.According to the properties of impurities in high-purity graphite,a method to enrich the impurities in high-purity graphite was put forward.After detection and analysis of enriched ash,it is found that the impurity in high-purity graphite was mostly composed of Si and Al,besides a trace of Fe,Ca and Mg,with the content of Si being the highest.How to increase Si removal efficiency is the key for improving purification effect.
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In order to examine the influence of impurity content on the characteristics to prevent the recession of yttria stabilized zirconia in combustion gas flow, sintered yttria stabilized zirconia (ZrO2) specimens with different impurity (Al2O3 or SiO2) contents were prepared and exposed under a combustion gas flow condition (T = 1500°C, P = 0.3MPa, V = 150m/s, PH2O = 35kPa, t = 5 - 20h). As a result, the significant weight loss of high purity ZrO2 was not found, and it was shown that high purity ZrO2 has superior characteristics to prevent the recession and is promising candidate materials. In addition, the impurity content influences on the recession characteristics, and the weight loss of ZrO2 with more impurity increases as the impurity content increases. Thus, in order to prevent the recession, the increase of purity is required. Furthermore, impurity contained in ZrO2 disappeared selectively from the surface under the combustion gas flow. The disappearance of impurity was also observed under the surface, and the thickness of the layer without impurity under the surface increased according to the exposure time.
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Abstract On the basis of study of the temperature dependence of mechanical and electrical properties of LiF crystals with different impurities an evident interaction between radiation defects and impurities is revealed. As a result of trapping of radiation defects (F‐ and H‐aggregate colour centres) by impurity centres the reconstruction of impurity centres takes place, causing a change of mechanical and electrical properties.
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